STL3NM60N STMicroelectronics

STL3NM60N N-channel 600 V, 1.5 , 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package Datasheet - production data Features Order code R max. I 1 DS(on) D 2 3 4 STL3NM60N 1.8 2.2 A 100% avalanche tested 8 5 7 6 6 7 5 Low input capacitance and gate charge 8 Low gate input resistance PowerFLAT 3.3x3.3 HV Application Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power G 5 4 MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds 3 6 lowest on-resistance and gate charge. It is D therefore suitable for the most demanding high 2 7 efficiency converters. 8 S 1 Bottom View Table 1. Device summary Order code Marking Package Packaging STL3NM60N 3NM60N PowerFLAT 3.3 x 3.3 HV Tape and reel November 2014 DocID022795 Rev 2 1/13 This is information on a product in full production. www.st.comContents STL3NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID022795 Rev 2