STL30P3LLH6 STMicroelectronics

STL30P3LLH6 Datasheet P-channel 30 V, 24 m typ., 9 A STripFET F6 DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL30P3LLH6 30 V 30 m 9 A 4.8 W Very low on-resistance Very low gate charge High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits S(1, 2, 3) very low R in all packages. DS(on) AM01475v4 Product status link STL30P3LLH6 Product summary Order code STL30P3LLH6 Marking 30P3L Package PowerFLAT 5x6 Packing Tape and reel DS9258 - Rev 5 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL30P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 30 A C (1) I D Drain current (continuous) at T = 100 C 18.75 A C Drain current (continuous) at T = 25 C 9 A pcb (2) I D Drain current (continuous) at T = 100 C 6.4 A pcb (2)(3) I Drain current (pulsed) 36 A DM (1) P Total power dissipation at T = 25 C 75 W TOT C (2) P Total power dissipation at T = 25 C 4.8 W TOT pcb (2) Derating factor 0.03 W/C T Storage temperature range -55 to 175 C stg T Operating junction temperature range 175 C J 1. This value is rated according to R . thj-c 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.00 C/W thj-case (1) R Thermal resistance junction-pcb, single operation 31.3 C/W thj-pcb 1. When mounted on an FR-4 board of 1 inch, 2oz Cu, steady state. Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9258 - Rev 5 page 2/17