X-On Electronics has gained recognition as a prominent supplier of STL33N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL33N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL33N60M2 STMicroelectronics

STL33N60M2 electronic component of STMicroelectronics
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Part No.STL33N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STL33N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.9498 ea
Line Total: USD 6.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.1808

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 6.9498
10 : USD 4.5468
25 : USD 4.2984
100 : USD 3.726
500 : USD 3.1752
1000 : USD 2.7864
3000 : USD 2.7756

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Ciss - Input Capacitance
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STL33N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL33N60M2 and other electronic components in the MOSFETs category and beyond.

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STL33N60M2 Datasheet N-channel 600 V, 0.115 typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Features V T R max I Order code DS Jmax DS(on) D 5 STL33N60M2 650 V 0.135 22 A 4 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile OSS 100% avalanche tested PowerFLAT 8x8 HV Zener-protected Drain(5) Applications Switching applications LLC converters, resonant converters Gate(1) Description Driver Power source (2) source (3, 4) This device is an N-channel Power MOSFET developed using MDmesh M2 NG1DS2PS34D5Z technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STL33N60M2 Product summary Order code STL33N60M2 Marking 33N60M2 Package PowerFLAT 8x8 HV Packing Tape & reel DS9512 - Rev 4 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 22 A D C (1) Drain current (continuous) at T = 100 C I 13.8 A D C (2) I Drain current (pulsed) 88 A DM P Total power dissipation at T = 25 C 150 W TOT C I Avalanche current, repetitive or not-repetitive (pulse width limited by T max) 5 A AR j Single pulse avalanche energy E 450 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range - 55 to 150 C stg T Operating junction temperature range 150 C j 1. The value is limited by package. 2. Pulse width limited by safe operating area. 3. I 22 A, di/dt 400 A/s, V < V , V = 400 V. SD DS( peak) (BR)DSS DD 4. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.83 C/W thj-case (1) R Thermal resistance junction-pcb 45 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. DS9512 - Rev 4 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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