STL13N60M2 STMicroelectronics

STL13N60M2 N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D STL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower R x area vs previous generation 1 DS(on) 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) Description 8 7 6 5 This device is an N-channel Power MOSFET developed using a new generation of MDmesh technology: MDmesh II Plus low Q . This g revolutionary Power MOSFET associates a G(4) vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 12 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL13N60M2 13N60M2 PowerFLAT 5x6 HV Tape and reel June 2014 DocID026363 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL13N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID026363 Rev 2