ATP101-TL-H ON Semiconductor

Ordering number : ENA1646A ATP101 P-Channel Power MOSFET ATP101 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--13A 17 S DS D R (on)1 I =--13A, V =--10V 23 30 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--7A, V =--4.5V 36 51 m DS D GS Input Capacitance Ciss 875 pF Output Capacitance Coss V =--10V, f=1MHz 220 pF DS Reverse Transfer Capacitance Crss 155 pF Turn-ON Delay Time t (on) 9.2 ns d Rise Time t 70 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 80 ns d Fall Time t 70 ns f Total Gate Charge Qg 18.5 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--25A 3.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 4.0 nC Diode Forward Voltage V I =--25A, V =0V --0.99 --1.5 V SD S GS Switching Time Test Circuit V = --15V V DD IN 0V --10V I = --13A D V IN R =1.15 L D V OUT PW=10s D.C.1% G ATP101 P.G 50 S Ordering Information Device Package Shipping memo ATP101-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1646-2/7