ATP106-TL-H ON Semiconductor

Ordering number : ENA1597A ATP106 P-Channel Power MOSFET ATP106 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --40 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--40V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.5 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--15A 28 S DS D R (on)1 I =--15A, V =--10V 19 25 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--8A, V =--4.5V 29 41 m DS D GS Input Capacitance Ciss 1380 pF Output Capacitance Coss V =--20V, f=1MHz 210 pF DS Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 120 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 110 ns d Fall Time t 90 ns f Total Gate Charge Qg 29 nC Gate-to-Source Charge Qgs V =--20V, V =--10V, I =--30A 6.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 5.9 nC Diode Forward Voltage V I =--30A, V =0V --0.97 --1.5 V SD S GS Switching Time Test Circuit V = --20V V IN DD 0V --10V I = --15A D V IN R =1.33 L D V OUT PW=10s D.C.1% G ATP106 P.G 50 S Ordering Information Device Package Shipping memo ATP106-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1597-2/7