SQM60030E www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 C MOSFET FEATURES TrenchFET power MOSFET TO-263 Package with low thermal resistance d AEC-Q101 qualified 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SS DD D GG Top View PRODUCT SUMMARY V (V) 80 DS G R ( ) at V = 10 V 0.0032 DS(on) GS I (A) 120 D N-Channel MOSFET Configuration Single S Package TO-263 ORDERING INFORMATION Lead (Pb)-free and halogen-free SQM60030E GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 80 DS V Gate-source voltage V 20 GS T = 25 C 120 C a Continuous drain current I D T = 125 C 120 C a Continuous source current (diode conduction) I 120 A S b Pulsed drain current I 250 DM Single pulse avalanche current I 70 AS L = 0.1 mH Single pulse avalanche Energy E 245 mJ AS T = 25 C 375 C b Maximum power dissipation P W D T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing S18-0555-Rev. B, 04-Jun-2018 Document Number: 67284 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM60030E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 80 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 80 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 80 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 80 V, T = 175 C - - 800 GS DS J a On-state drain current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0026 0.0032 GS D a Drain-source on-state resistance R V = 10 V I = 30 A, T = 125 C - - 0.0051 DS(on) GS D J V = 10 V I = 30 A, T = 175 C - - 0.0062 GS D J b Forward transconductance g V = 15 V, I = 30 A - 105 - S fs DS D b Dynamic Input capacitance C - 9500 12 000 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 3300 4500 pF oss GS DS Reverse transfer capacitance C - 310 400 rss c Total gate charge Q - 110 165 g c Gate-source charge Q V = 10 V V = 40 V, I = 80 A -35 - nC gs GS DS D c Gate-drain charge Q -15 - gd Gate resistance R f = 1 MHz 0.7 1.45 2.2 g c Turn-on delay time t -19 30 d(on) c Rise time t -13 20 r V = 40 V, R = 0.5 DD L ns c I 80 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -39 60 d(off) c Fall time t -9 15 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 250 A SM I = 80 A, V = 0 V Forward voltage V -0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0555-Rev. B, 04-Jun-2018 Document Number: 67284 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000