MDS5951 Dual N-Channel Trench MOSFET MDS5951 Dual N-Channel Trench MOSFET 60V, 4.5A, 50m General Description Features V = 60V The MDS5951 uses advanced Magnachips DS I = 4.5A V = 10V D GS MOSFET Technology, which provides low on-state RDS(ON) resistance, high switching performance and < 50m V = 10V GS excellent reliability. < 60m V = 4.5V GS Applications Inverters General purpose applications 5(D ) D1 D2 2 6(D ) 2 7(D ) 1 8(D ) 1 G1 G2 4(G ) 2 3(S ) 2 2(G ) 1 S1 S2 1(S ) 1 o Absolute Maximum Ratings (T =25 C unless otherwise noted) A Characteristics Symbol Rating Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 4.5 A A Continuous Drain Current (Note 4) I D o T =70 C 3.6 A A Pulsed Drain Current (Note 3) I 20 A DM o T =25 C 2.0 A Power Dissipation for Single Operation (Note 2) P W D o T =70 C 1.28 A o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Steady-State) (Note 1) RJA 62.5 o C/W Thermal Resistance, Junction-to-Case RJC 34.0 February 2010. Version2.0 1 MagnaChip Semiconductor Ltd. MDS5951 Dual N-Channel Trench MOSFET Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDS5951URH -55~150 C SOIC-8 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) A Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 60 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 2.0 3.0 GS(th) DS GS D Zero Gate Voltage Drain Current I V = 60V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 4.5A - 38 50 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 3.0A - 46 60 GS D Forward Transconductance g V = 10V, I =3.3A - 11 - S FS DS D Dynamic Characteristics Total Gate Charge ( V =10V) - 9.0 10.5 gs Q g Total Gate Charge ( V =4.5V) 4.4 gs V = 30V, I = 4.5A, V = 10V nC DS D GS Gate-Source Charge Q - 1.5 - gs Gate-Drain Charge Q - 2.0 - gd Input Capacitance C - 420 - iss Reverse Transfer Capacitance C VDS = 30V, VGS = 0V, f = 1.0MHz - 25 - pF rss Output Capacitance C - 50 - oss Turn-On Delay Time t - 4.5 - d(on) Turn-On Rise Time t - 20 - r V = 10V ,V = 30V, GS DS ns RL = 6.7, RGEN = 5 Turn-Off Delay Time t - 15 - d(off) Turn-Off Fall Time t - 9.5 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1.0A, V = 0V - 0.7 1.1 V SD S GS Body Diode Reverse Recovery Time t - 21 30 ns rr I = 4.5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Qrr - 25 - nC Note : 1. Surface mounted RF4 board with 2oz. Copper. PDSM is based on R JA and the maximum allowed junction temperature of 150C. 2. PD is based on T =150C, using R J(MAX) JA, 3. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature T =150C. J(MAX) 4. Static characteristics are obtained using <300 s pulses, duty cycle 0.5% max. February 2010. Version2.0 2 MagnaChip Semiconductor Ltd.