MDU5593S - Dual N-Channel Trench MOSFET 30V
MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description Features
The MDU5593S uses advanced MagnaChip s MOSFET FET1 FET2
Technology, which provides high performance in on-state V = 30V V = 30V
DS DS
resistance, fast switching performance and excellent I = 34A I = 40A @V = 10V
D D GS
quality. MDU5593S is suitable for DC/DC converter and R
DS(ON)
general purpose applications. < 8.0m < 3.3m @V = 10V
GS
< 11.0m < 5.0m @V = 4.5V
GS
100% UIL Tested
100% Rg Tested
S2
5
S2
6
S2
7
G2
8
S1/D2
3
1
D1
2
2
D1
1
3
D1
4
G1
o
Absolute Maximum Ratings (Ta = 25 C)
Characteristics Symbol FET1 FET2 Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 20 V
GSS
o
T =25 C (Silicon Limited) 52 95
C
(1) o
Continuous Drain Current T =25 C (Package Limited) I 34 40 A
C D
o
T =25 C 13 21
A
Pulsed Drain Current I 40 100 A
DM
o
T =25 C 35.7 44.6
C
Power Dissipation P W
D
o
T =25 C 2.2 2.5
A
(2)
Single Pulse Avalanche Energy E 60 60 mJ
AS
o
Junction and Storage Temperature Range T , T -55~150 C
J stg
Thermal Characteristics
Characteristics Symbol FET1 FET2 Unit
(1)
Thermal Resistance, Junction-to-Ambient R 57 50
JA
o
C/W
Thermal Resistance, Junction-to-Case R 3.5 2.8
JC
1
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDU5593SVRH -55~150 C Dual PDFN56 Tape & Reel Halogen Free
o
FET1 Electrical Characteristics (Ta =25 C)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BV I = 1mA, V = 0V 30 - -
DSS D GS
V
Gate Threshold Voltage V V = V , I = 250A 1.0 1.8 3.0
GS(th) DS GS D
Drain Cut-Off Current I V = 24V, V = 0V - - 1
DSS DS GS
A
Gate Leakage Current I V = 20V, V = 0V - - 0.1
GSS GS DS
V = 10V, I = 13A - 5.1 8.0
GS D
Drain-Source ON Resistance R m
DS(ON)
V = 4.5V, I = 11A - 7.2 11.0
GS D
Forward Transconductance g V = 5V, I = 13A - 35 - S
fs DS D
Dynamic Characteristics
Total Gate Charge Q - 18.0 -
g(10V)
Total Gate Charge Q - 9.5 -
g(4.5V)
V = 15.0V, I = 10A,
DS D
nC
V = 10V
GS
Gate-Source Charge Q - 3.2 -
gs
Gate-Drain Charge Q - 3.2 -
gd
Input Capacitance C - 1,142 -
iss
V = 15.0V, V = 0V,
DS GS
Output Capacitance C - 446 - pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C - 83 -
rss
Turn-On Delay Time t - 9.9 -
d(on)
Rise Time t - 12.1 -
r
V =15V, I =10A, R =3 ns
DD D g
Turn-Off Delay Time t - 28.5 -
d(off)
Fall Time t - 6.9 -
f
Gate Resistance Rg f=1 MHz - 1.0 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.7 1.0 V
SD S GS
Body Diode Reverse Recovery Time t - 31.8 - ns
rr
I = 10A, dl/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q - 29.4 - nC
rr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at T =25 is silicon limited.
C
2. E is tested at starting T = 25 , L = 0.5mH, I = 15.5A, V = 27V, V = 10V. And 100% UIL Test at L = 0.1mH, I = 18.0A.
AS j AS DD GS AS
2
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.