MPMD100B120RH Magnachip

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.7V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at T =100 C Isolation Type Package conditioning electrical systems. These IGBT Module series are ideally suited for IH, High Applications Power inverters, Motors drives and other Induction Heating, Motor Drives, High Power Inverters applications where switching losses are Welding Machine, UPS significant portion of the total losses. Equivalent Circuit 7D M-3 E301932 o Absolute Maximum Ratings Tc = 25 C (Per Leg) Characteristics Symbol Rating Unit Collector-Emitter Voltage V 1200 V CES Gate- Voltage V 20 V GES o T =25 C 150 A C Continuous Collector Current I C o T =80 C 100 A C (1) Pulsed Collector Current I 200 A CM o Diode Continuous Forward Current T =80 C I 100 A C F Diode Maximum Forward Current I 200 A FM o Power Dissipation T =25 C P 780 W C D Short Circuit Withstand Time T 10 us SC o Operating Junction Temperature Tj -55~150 C o Storage Temperature Range T -55~125 C stg Isolation Voltage AC 1minute V 2500 V iso Mounting screw Torque : M6 - 4 N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature 1 March 2013.Version 2.0 MagnaChip Semiconductor Ltd. MPMD100B120RH NPT & Rugged Type 1200V IGBT Module o Electrical Characteristics of IGBT T =25 C(unless otherwise specified) C Characteristics Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Collector-Emitter Breakdown Voltage BV I = 1mA, V = 0V 1200 - - CES C GE V Gate Threshold Voltage V V = V , I = 2mA 4.5 - 7.5 GE(th) CE GE C Collector Cut-Off Current I V = 1200V, V = 0V - - 1 mA CES CE GE Gate Leakage Current I V = 20V, V = 0V - - 250 nA GES GE CE T =25 - 2.7 3.2 V C V = 15V, GE Collector-Emitter saturation voltage V CE(sat) I =100A C T =100 - 3.3 - V C Dynamic Characteristics Total Gate Charge Q - 400 - g V = 600V, I = 100A, CC C Gate-Emitter Charge Q - 44 - nC ge V = 15V GE Gate-Collector Charge Q - 236 - gc Input Capacitance C - 4760 - ies V = 30V, V = 0V, CE GE Output Capacitance C - 518 - pF oes f = 1.0MHz Reverse Transfer Capacitance C - 175 -- res Turn-On Delay Time t - 135 - d(on) Rise Time t - 60 - r ns V = 600V, I =100A, Turn-Off Delay Time t CC C - 450 - d(off) Fall Time t V = 15V, - 70 - f GE Turn on Switching Loss E - 6.7 - mJ on R = 10, Inductive Load G Turn off Switching Loss E - 6.0 - mJ off Total Switching Loss E - 12.7 - mJ ts V = 600V, V = 15V cc GE Short Circuit Withstand Time T 10 - - us sc R = 10 Tc = 100 G o Electrical Characteristics of FRD Ta =25 C(unless otherwise specified) T =25 - 2.9 3.5 C Diode Forward Voltage V I =100A V FM F T =100 - 2.3 - C T =25 - 100 - C Diode Reverse Recovery Time t ns rr 220 T =100 C I =100A, T =25 - 5 - F C Diode Peak Reverse I V =600V, A rr R Recovery Current di/dt = -200A/us T =100 - 15 - C T =25 - 250 - C Diode Reverse Q nC rr Recovery Charge T =100 - 1650 - C 2 March 2013.Version 2.0 MagnaChip Semiconductor Ltd.