APTGT50TL601G Microchip

APTGT50TL601G Three level inverter V = 600V CES Trench + Field Stop IGBT3 I = 50A Tc = 80C C Power Module Application Solar converter Uninterruptible Power Supplies Features Technology Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 9/10 Q1 to Q4 Absolute maximum ratings Symbol Parameter Max ratings Unit V V Collector - Emitter Breakdown Voltage 600 CES T = 25C 80 C I Continuous Collector Current C A T = 80C 50 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 176 W C D T = 150C RBSOA Reverse Bias Safe Operating Area J 100A 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-8 www.microsemi.com APTGT50TL601G Rev1 October, 2012 APTGT50TL601G All ratings T = 25C unless otherwise specified j Q1 to Q4 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE T = 25C 1.5 1.9 V =15V j GE V Collector Emitter Saturation Voltage V CE(sat) I = 50A C T = 150C 1.7 j V Gate Threshold Voltage V = V , I = 600A 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 600 nA GES GE CE Q1 to Q4 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 3150 ies V = 0V GE V = 25V pF C Output Capacitance 200 oes CE f = 1MHz C Reverse Transfer Capacitance 95 res V =15V, I =50A GE C Q Gate charge 0.5 C G V =300V CE Inductive Switching (25C) T Turn-on Delay Time 110 d(on) V = 15V GE T Rise Time 45 r ns V = 300V Bus T Turn-off Delay Time 200 d(off) I = 50A C T Fall Time 40 f R = 8.2 G Inductive Switching (150C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r V = 300V ns Bus T Turn-off Delay Time 250 d(off) I = 50A C T Fall Time 60 f R = 8.2 G T = 25C 0.3 V = 15V j GE E Turn-on Switching Energy mJ on V = 300V T = 150C 0.43 Bus j I = 50A C T = 25C 1.35 j E Turn-off Switching Energy mJ off R = 8.2 G T = 150C 1.75 j V 15V V = 360V GE Bus I Short Circuit data 250 A sc t 6s T = 150C p j R Junction to Case Thermal Resistance 0.85 C/W thJC 2-8 www.microsemi.com APTGT50TL601G Rev1 October, 2012