APTGT75DA60T1G Microchip

APTGT75DA60T1G Boost chopper V = 600V CES Trench + Field Stop IGBT3 I = 75A Tc = 80C C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features 3 Trench + Field Stop IGBT3 Technology NTC 4 - Low voltage drop Q2 - Low tail current CR2 - Switching frequency up to 20 kHz - Soft recovery parallel diodes 9 - Low diode VF - Low leakage current 10 - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring 1 2 12 High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 3/4 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 100 C I Continuous Collector Current C A T = 80C 75 C I Pulsed Collector Current T = 25C 140 CM C V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 250 W D C T = 150C RBSOA Reverse Bias Safe Operating Area 150A 550V J These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTGT75DA60T1G Rev 1 October, 2012 APTGT75DA60T1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE V =15V T = 25C 1.5 1.9 j GE V Collector Emitter Saturation Voltage V CE(sat) I = 75A C T = 150C 1.7 j V Gate Threshold Voltage V = V , I = 600A 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 600 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 4620 ies V = 0V GE V = 25V pF C Output Capacitance 300 oes CE f = 1MHz C Reverse Transfer Capacitance 140 res Inductive Switching (25C) T Turn-on Delay Time 110 d(on) V = 15V GE T Rise Time 45 r V = 300V ns Bus T Turn-off Delay Time 200 d(off) I = 75A C T Fall Time 40 f R = 4.7 G Inductive Switching (150C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r V = 300V ns Bus T Turn-off Delay Time I = 75A 250 d(off) C T Fall Time R = 4.7 60 G f V = 15V T = 25C 0.35 GE j E Turn-on Switching Energy mJ on V = 300V Bus T = 150C 0.6 j I = 75A C T = 25C 2.2 j E Turn-off Switching Energy mJ off R = 4.7 G T = 150C 2.6 j Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 600 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =600V A RM R T = 150C 500 j I DC Forward current Tc = 80C 75 A F I = 75A T = 25C 1.6 2 F j V Diode Forward Voltage F V = 0V T = 150C 1.5 V GE j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j I = 75A F T = 25C 3.6 j V = 300V R Q Reverse Recovery Charge C rr di/dt =2000A/s T = 150C 7.6 j T = 25C 0.85 j E Reverse Recovery Energy mJ r T = 150C 1.8 j 2 6 www.microsemi.com APTGT75DA60T1G Rev 1 October, 2012