X-On Electronics has gained recognition as a prominent supplier of DZ800S17K3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. DZ800S17K3 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

DZ800S17K3 Infineon

DZ800S17K3 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.DZ800S17K3
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules 1.7KV 800A
Datasheet: DZ800S17K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 164.307 ea
Line Total: USD 164.31 
Availability - 41
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 164.307
10 : USD 157.982
100 : USD 156.662
200 : USD 156.64
500 : USD 156.629
1000 : USD 156.596
2000 : USD 156.552

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DZ800S17K3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DZ800S17K3 and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- DZ800S17K3 IGBT-modules 62mm C-Serien Modul mit Emitter Controlled Diode 62mm C-series module with Emitter Controlled diode , / Diode, Inverter Preliminary Data / Maximum Rated Values T = 25C V 1700 V vj RRM Repetitive peak reverse voltage I 800 A F Continuous DC forward current t = 1 ms I 1600 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 99500 As R P vj It - value / Characteristic Values min. typ. max. I = 800 A, V = 0 V T = 25C 1,80 2,20 V F GE vj VF Forward voltage I = 800 A, V = 0 V T = 125C 1,90 V F GE vj I = 800 A, - di /dt = 4900 A/s (T =125C) T = 25C 780 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 850 A R vj RM V = -15 V GE I = 800 A, - di /dt = 4900 A/s (T =125C) T = 25C 205 C F F vj vj Recovered charge V = 900 V T = 125C Q 345 C R vj r V = -15 V GE I = 800 A, - di /dt = 4900 A/s (T =125C) T = 25C 130 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 225 mJ R vj rec V = -15 V GE / per diode R 0,058 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,01 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: HS date of publication: 2013-10-03 approved by: TS revision: 2.2 1 / Technical Information IGBT- DZ800S17K3 IGBT-modules Preliminary Data / Module RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Isolation test voltage Cu Material of module baseplate (class 1, IEC 61140) Al2O3 Internal isolation basic insulation (class 1, IEC 61140) - / terminal to heatsink 25,0 mm Creepage distance - / terminal to terminal 19,0 - / terminal to heatsink 25,0 mm Clearance - / terminal to terminal 10,0 CTI > 400 Comperative tracking index min. typ. max. / per module R 0,01 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease , LsCE 16 nH Stray inductance module ,- T = 25C, / per switch R 0,50 m C CC +EE Module lead resistance, terminals - chip T -40 125 C stg Storage temperature M6 M 3,00 - 6,00 Nm Mounting torque for modul mounting Screw M6 - Mounting according to valid application note M4 1,1 - 2,0 Nm Terminal connection torque Screw M4 - Mounting according to valid application note M M6 2,5 - 5,0 Nm Screw M6 - Mounting according to valid application note G 340 g Weight Dynamische Daten gelten in Verbindung mit FF800R17KE3 Modul Dynamic data valid in conjunction with FF800R17KE3 module prepared by: HS date of publication: 2013-10-03 approved by: TS revision: 2.2 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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