IFF450B12ME4P B11 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC / Strommesswiderstand EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / current sense shunt J V = 1200V CES I = 450A / I = 900A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Integrierter Stromsensor Integrated current sensor Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate PressFIT Verbindungstechnik PressFIT contact technology Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2019-06-21IFF450B12ME4P B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 65C, Tvj max = 175C ICDC 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,00 V GE vj CE sat Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 17,1 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage Gateladung V = -15 / 15 V Q 3,30 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,7 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,17 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,19 s GE vj R = 0,62 T = 150C 0,19 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,05 s GE vj R = 0,62 T = 150C 0,06 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 600 V T = 25C 0,37 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,46 s GE vj R = 0,62 T = 150C 0,49 s Goff vj Fallzeit, induktive Last I = 450 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,18 s GE vj R = 0,62 T = 150C 0,20 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 17,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 7750 A/s (T = 150C) T = 125C E 30,0 mJ vj vj on V = -15 / 15 V, R = 0,62 T = 150C 35,5 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 36,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 3350 V/s (T = 150C) T = 125C E 54,0 mJ vj vj off V = -15 / 15 V, R = 0,62 T = 150C 60,0 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,0959 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.2 2019-06-21