FF200R06YE3 Infineon

/ Technical Information IGBT- FF200R06YE3 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 50C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 220 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 175 P 515 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 1,70 V C GE vj I = 3,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 2,10 C Gate charge T = 25C R 1,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,38 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 200 A, V = 300 V T = 25C 0,09 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,09 s R = 3,3 T = 150C 0,09 s Gon vj () I = 200 A, V = 300 V T = 25C 0,04 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 3,3 T = 150C 0,04 s Gon vj () I = 200 A, V = 300 V T = 25C 0,35 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 3,3 T = 150C 0,40 s Goff vj () I = 200 A, V = 300 V T = 25C 0,05 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,3 T = 150C 0,07 s Goff vj () I = 200 A, V = 300 V, L = 40 nH T = 25C 1,60 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4000 A/s (Tvj = 150C) Tvj = 125C Eon 2,20 mJ R = 3,3 T = 150C 2,40 mJ Gon vj ( I = 200 A, V = 300 V, L = 40 nH T = 25C 6,30 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 7,50 mJ R = 3,3 T = 150C 7,90 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 1400 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 1000 A IGBT / per IGBT R 0,26 0,29 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,17 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 2.0 1 / Technical Information IGBT- FF200R06YE3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 600 V vj RRM Repetitive peak reverse voltage I 200 A F Continuous DC forward current t = 1 ms I 400 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 4550 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 4300 As / Characteristic Values min. typ. max. I = 200 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 200 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 200 A, VGE = 0 V Tvj = 150C 1,45 V I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 160 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 190 A R vj RM VGE = -15 V Tvj = 150C 205 A I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 9,30 C F F vj vj Recovered charge V = 300 V T = 125C Q 14,5 C R vj r VGE = -15 V Tvj = 150C 17,5 C I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 2,50 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 4,20 mJ R vj rec VGE = -15 V Tvj = 150C 5,00 mJ / per diode RthJC 0,47 0,52 K/W Thermal resistance, junction to case / per diode R 0,26 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions / NTC-Thermistor / Characteristic Values min. typ. max. T = 25C R 5,00 k C 25 Rated resistance R100 TC = 100C, R100 = 493 R/R -5 5 % Deviation of R100 T = 25C P 20,0 mW C 25 Power dissipation B- R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B- R = R exp B (1/T - 1/(298,15 K)) B 3411 K 2 25 25/80 2 25/80 B-value B- R = R exp B (1/T - 1/(298,15 K)) B 3433 K 2 25 25/100 2 25/100 B-value Specification according to the valid application note. prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 2.0 2