TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed.UL Recognize file E145592 ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz RBSOA and SCSOA Rated Ultra Low Leakage Current C Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT50GF120JRDQ3 V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 120 C1 C I Continuous Collector Current T = 100C 64 Amps C2 C 1 I Pulsed Collector Current 225 CM Switching Safe Operating Area T = 150C SSOA 225A 1200V J P Total Power Dissipation Watts 521 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 750A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 700A, T = 25C) GE(TH) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 75A, T = 25C) 2.5 3.0 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 75A, T = 125C) 3.1 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 0.75 CE GE j I mA CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 5.5 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50GF120JRDQ3 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 5320 ies C pF Output Capacitance V = 0V, V = 25V 555 oes GE CE C f = 1 MHz Reverse Transfer Capacitance res 300 V V Gate-to-Emitter Plateau Voltage Gate Charge 10.0 GEP 3 Q V = 15V Total Gate Charge 495 g GE V = 600V Q nC Gate-Emitter Charge CE 50 ge I = 75A Q C Gate-Collector Mille) Charge 290 gc T = 150C, R = 1.0, V = J G GE Switching Safe Operating Area SSOA 225 A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time 36 d(on) V = 800V t Current Rise Time 70 CC r ns t V = 15V Turn-off Delay Time 355 d(off) GE I = 75A t C Current Fall Time 65 f R = 1.0 4 G E Turn-on Switching Energy 7965 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 9895 on2 6 E Turn-off Switching Energy 4340 off t Inductive Switching (125C) Turn-on Delay Time 36 d(on) t V = 800V Current Rise Time 70 r CC ns V = 15V t Turn-off Delay Time GE 410 d(off) I = 75A t C Current Fall Time 110 f R = 1.0 4 4 G E 7890 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 14110 on2 6 E Turn-off Switching Energy 6040 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .24 JC C/W R Junction to Case (DIODE) .56 JC W gm Package Weight 29.2 T V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts 2500 Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 052-6283 Rev A 3-2006