A2C25S12M3 Datasheet ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Converter inverter brake topology 1600 V, very low drop rectifiers for converter 1200 V, 25 A IGBTs and diodes Soft and fast recovery diode Integrated NTC UL recognition: UL 1557, file E81734 ACEPACK 2 Isolation rating of 2500 V /min rms RoHS compliant Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2C25S12M3 Product summary Order code A2C25S12M3 Marking A2C25S12M3 Package ACEPACK 2 Leads type Solder contact pins DS12320 - Rev 4 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.A2C25S12M3 Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at T = 25 C, unless otherwise specified. J 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE I Continuous collector current (T = 100 C) 25 A C C (1) I Pulsed collector current (t = 1 ms) 50 A CP p V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 197 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter breakdown V I = 1 mA, V = 0 V 1200 V (BR)CES C GE voltage V = 15 V, I = 25 A 1.95 2.45 V GE C V Collector-emitter saturation CE(sat) (terminal) voltage V = 15 V, I = 25 A, T = 150 C 2.3 V GE C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I V = 0 V, V = 1200 V Collector cut-off current 100 A CES GE CE I V = 0 V, V = 20 V Gate-emitter leakage current 500 nA GES CE GE C Input capacitance 1550 pF ies C V = 25 V, f = 1 MHz, V = 0 V Output capacitance 130 pF oes CE GE C Reverse transfer capacitance 65 pF res V = 960 V, I = 25 A, CC C Q Total gate charge 80 nC g V = 15 V GE t Turn-on delay time 109 ns d(on) V = 600 V, I = 25 A, CC C t Current rise time 15.3 ns r R = 15 , V = 15 V, G GE (1) di/dt = 1290 A/s E Turn-on switching energy 0.97 mJ on DS12320 - Rev 4 page 2/18