A2C50S65M2-F Datasheet ACEPACK 2 converter inverter brake, 650 V, 50 A trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Converter inverter brake topology 1600 V, very low drop rectifiers for converter 650 V, 50 A IGBTs and diodes Soft and fast recovery diode Integrated NTC TM ACEPACK 2 Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2C50S65M2-F Product summary Order code A2C50S65M2-F Marking A2C50S65M2-F Package ACEPACK 2 Leads type Press fit contact pins DS12341 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.A2C50S65M2-F Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at T = 25 C, unless otherwise specified. J 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE I Continuous collector current (T = 100 C) 50 A C C (1) I Pulsed collector current (t = 1 ms) 100 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 208 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter breakdown V I = 1 mA, V = 0 V 650 V (BR)CES C GE voltage V = 15 V, I = 50 A 1.95 2.3 V GE C V Collector-emitter saturation CE(sat) V = 15 V, I = 50 A, voltage GE C (terminal) 2.3 V T = 150 C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 650 V 100 A CES GE CE I Gate-emitter leakage current V = 0 V, V = 20 V 500 nA GES CE GE C Input capacitance 4150 pF ies V = 25 V, f = 1 MHz, CE C Output capacitance 170 pF oes V = 0 V GE C Reverse transfer capacitance 80 pF res V = 520 V, I = 50 A, CC C Q Total gate charge 150 nC g V = 15 V GE t Turn-on delay time 147 ns d(on) V = 300 V, I = 50 A, CC C t Current rise time R = 6.8 , V = 15 V, 17.5 ns r G GE (1) di/dt = 2320 A/s E Turn-on switching energy 0.147 mJ on DS12341 - Rev 3 page 2/18