DF80R07W1H5FP B11 EasyPACK Modul mit TRENCHSTOP 5 H5 und CoolSiC Schottky Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EasyPACK module with TRENCHSTOP 5 H5 and CoolSiC Schottky diode and PressFIT / pre-applied Thermal Interface Material J V = 650V CES I = 40A / I = 80A C nom CRM Potentielle Anwendungen Potential Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features TM TM CoolSiC Schottky Diode Gen 5 CoolSiC Schottky diode gen 5 Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability up to 650V Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2018-10-05DF80R07W1H5FP B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom ICN 40 A Implemented collector current Kollektor-Dauergleichstrom T = 100C, T = 175C I 20 A H vj max CDC Continuous DC collector current Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 80 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 20 A T = 25C 1,40 1,72 V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,45 V T = 150C 1,50 V vj Gate-Schwellenspannung I = 0,35 mA, V = V , T = 25C V 3,25 4,00 4,75 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V, VCE = 400 V QG 0,165 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,00 nF Input capacitance Rckwirkungskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 0,008 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 0,012 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 20 A, V = 400 V T = 25C 0,012 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,013 s R = 2,7 T = 150C 0,013 s Gon vj Anstiegszeit, induktive Last I = 20 A, V = 400 V T = 25C 0,003 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,004 s GE vj R = 2,7 T = 150C 0,004 s Gon vj Abschaltverzgerungszeit, induktive Last I = 20 A, V = 400 V T = 25C 0,072 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,09 s GE vj R = 2,7 T = 150C 0,095 s Goff vj Fallzeit, induktive Last I = 20 A, V = 400 V T = 25C 0,018 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,028 s GE vj R = 2,7 T = 150C 0,029 s Goff vj Einschaltverlustenergie pro Puls I = 20 A, V = 400 V, L = 25 nH T = 25C 0,091 mJ C CE vj Turn-on energy loss per pulse di/dt = 6300 A/s (T = 150C) T = 125C E 0,12 mJ vj vj on V = -15 / 15 V, R = 2,7 T = 150C 0,127 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 20 A, V = 400 V, L = 25 nH T = 25C 0,076 mJ C CE vj Turn-off energy loss per pulse du/dt = 7500 V/s (T = 150C) T = 125C E 0,167 mJ vj vj off V = -15 / 15 V, R = 2,7 T = 150C 0,195 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 400 V GE CC ISC SC data V = V -L di/dt t 0 s, T = 150C 180 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 1,85 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2018-10-05