X-On Electronics has gained recognition as a prominent supplier of A2P75S12M3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. A2P75S12M3 IGBT Modules are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

A2P75S12M3 STMicroelectronics

A2P75S12M3 electronic component of STMicroelectronics
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Part No.A2P75S12M3
Manufacturer: STMicroelectronics
Category: IGBT Modules
Description: IGBT Modules PTD NEW MAT & PWR SOLUTION
Datasheet: A2P75S12M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 55.5441 ea
Line Total: USD 55.54 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 18
Multiples : 1
18 : USD 99.996
25 : USD 99.073
50 : USD 98.137
100 : USD 97.214
250 : USD 96.291
500 : USD 95.355
1000 : USD 94.432
2500 : USD 93.496
5000 : USD 92.56
10000 : USD 91.624

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 18
Multiples : 18
18 : USD 86.0981

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 89.8923

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 110.32

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 71.3361

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 55.5441

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Pd - Power Dissipation
Package / Case
Technology
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
Series
Cnhts
Hts Code
Mxhts
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the A2P75S12M3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A2P75S12M3 and other electronic components in the IGBT Modules category and beyond.

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A2P75S12M3 Datasheet ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Sixpack topology 1200 V, 75 A IGBTs and diodes Soft and fast recovery diode ACEPACK 2 Integrated NTC Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2P75S12M3 Product summary Order code A2P75S12M3 Marking A2P75S12M3 Package ACEPACK 2 Leads type Solder contact pins DS11655 - Rev 6 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.A2P75S12M3 Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T = 25 C, unless otherwise specified. J Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current (T = 100 C) 75 A C C (1) I Pulsed collector current (t = 1 ms) 150 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 454.5 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V I = 1 mA, V = 0 V 1200 V (BR)CES C GE breakdown voltage V = 15 V, I = 75 A 1.95 2.3 GE C V CE(sat) Collector-emitter V V = 15 V, I = 75 A, saturation voltage GE C (terminal) 2.3 T = 150 C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 1200 V 100 A CES GE CE Gate-emitter leakage I V = 0 V, V = 20 V 500 nA GES CE GE current C Input capacitance 4700 pF ies C Output capacitance 350 pF oes V = 25 V, f = 1 MHz, V = 0 V CE GE Reverse transfer C 190 pF res capacitance Q Total gate charge V = 960 V, I = 75 A, V = 15 V 350 nC g CC C GE t Turn-on delay time 198 ns d(on) V = 600 V, I = 75 A, R = 10 , CC C G t Current rise time 32 ns r V = 15 V, di/dt = 1900 A/s GE Turn-on switching (1) E 3.59 mJ on energy DS11655 - Rev 6 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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