Technische Information / Technical Information IGBT-Module FP40R12KT3G IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 40 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 55 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 80 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 210 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 40 A, V = 15 V T = 25C 1,80 2,30 V C GE vj V CE sat Collector-emitter saturation voltage I = 40 A, V = 15 V T = 125C 2,05 V C GE vj Gate-Schwellenspannung IC = 1,50 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,33 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 6,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,50 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,09 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 40 A, VCE = 600 V Tvj = 25C 0,09 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,09 s GE vj RGon = 27 Anstiegszeit, induktive Last IC = 40 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 27 Abschaltverzgerungszeit, induktive Last IC = 40 A, VCE = 600 V Tvj = 25C 0,42 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,52 s GE vj RGoff = 27 Fallzeit, induktive Last IC = 40 A, VCE = 600 V Tvj = 25C 0,07 s t f Fall time, inductive load V = 15 V T = 125C 0,09 s GE vj RGoff = 27 Einschaltverlustenergie pro Puls IC = 40 A, VCE = 600 V, LS = 45 nH Tvj = 25C 4,10 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 6,00 mJ GE vj on RGon = 27 Abschaltverlustenergie pro Puls IC = 40 A, VCE = 600 V, LS = 45 nH Tvj = 25C 3,10 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 3,60 mJ GE vj off RGoff = 27 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 160 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,60 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.1 1Technische Information / Technical Information IGBT-Module FP40R12KT3G IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 40 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 80 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 320 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 40 A, V = 0 V T = 25C 1,75 2,30 V F GE vj VF Forward voltage I = 40 A, V = 0 V T = 125C 1,75 V F GE vj Rckstromspitze I = 40 A, - di /dt = 900 A/s (T =125C) T = 25C 39,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 38,0 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 40 A, - di /dt = 900 A/s (T =125C) T = 25C 4,20 C F F vj vj Recovered charge V = 600 V T = 125C Q 7,80 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 40 A, - di /dt = 900 A/s (T =125C) T = 25C 1,35 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 2,80 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,95 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 80C I 50 A C FRMSM Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 75 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 315 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 260 A Grenzlastintegral tp = 10 ms, Tvj = 25C 500 As It It - value t = 10 ms, T = 150C 340 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 40 A V 1,20 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 2,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 1,00 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op C Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.1 2