X-On Electronics has gained recognition as a prominent supplier of A2P75S12M3-F IGBT Modules across the USA, India, Europe, Australia, and various other global locations. A2P75S12M3-F IGBT Modules are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

A2P75S12M3-F STMicroelectronics

A2P75S12M3-F electronic component of STMicroelectronics
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Part No.A2P75S12M3-F
Manufacturer: STMicroelectronics
Category: IGBT Modules
Description: IGBT Modules PTD NEW MAT & PWR SOLUTION
Datasheet: A2P75S12M3-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 65.3798 ea
Line Total: USD 65.38 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 18
Multiples : 1
18 : USD 78.4063

0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 18
Multiples : 1
18 : USD 82.4232
36 : USD 81.6058
54 : USD 78.4338
90 : USD 77.1284

0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 18
Multiples : 18
18 : USD 113.8815
36 : USD 107.7257
72 : USD 101.5699
108 : USD 95.4142
144 : USD 89.2584

0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 83.1171

0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 65.3798

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the A2P75S12M3-F from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the A2P75S12M3-F and other electronic components in the IGBT Modules category and beyond.

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A2P75S12M3-F Datasheet ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Sixpack topology 1200 V, 75 A IGBTs and diodes Soft and fast recovery diode Integrated NTC ACEPACK 2 Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2P75S12M3-F Product summary Order code A2P75S12M3-F Marking A2P75S12M3-F Package ACEPACK 2 Leads type Press fit contact pins DS11656 - Rev 5 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.A2P75S12M3-F Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T = 25 C, unless otherwise specified. J Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current (T = 100 C) 75 A C C (1) I Pulsed collector current (t = 1 ms) 150 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 454.5 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V I = 1 mA, V = 0 V 1200 V (BR)CES C GE breakdown voltage V = 15 V, I = 75 A 1.95 2.3 GE C V CE(sat) Collector-emitter V V = 15 V, I = 75 A, saturation voltage GE C (terminal) 2.3 T = 150 C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 1200 V 100 A CES GE CE Gate-emitter leakage I V = 0 V, V = 20 V 500 nA GES CE GE current C Input capacitance 4700 pF ies C Output capacitance 350 pF oes V = 25 V, f = 1 MHz, V = 0 V CE GE Reverse transfer C 190 pF res capacitance Q Total gate charge V = 960 V, I = 75 A, V = 15 V 350 nC g CC C GE t Turn-on delay time 198 ns d(on) V = 600 V, I = 75 A, R = 10 , CC C G t Current rise time 32 ns r V = 15 V, di/dt = 1900 A/s GE Turn-on switching (1) E 3.59 mJ on energy DS11656 - Rev 5 page 2/14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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