A2C35S12M3-F Datasheet ACEPACK 2 converter inverter brake, 1200 V, 35 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Converter inverter brake topology 1600 V, very low drop rectifiers for converter 1200 V, 35 A IGBTs and diodes Soft and fast recovery diode Integrated NTC TM ACEPACK 2 Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status link A2C35S12M3-F Product summary Order code A2C35S12M3-F Marking A2C35S12M3-F Package ACEPACK 2 Leads type Press fit contact pins DS11632 - Rev 4 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.A2C35S12M3-F Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at T = 25 C, unless otherwise specified. J 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current (T = 100 C) 35 A C C (1) I Pulsed collector current (t = 1 ms) 70 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 250 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V I = 1 mA, V = 0 V 1200 V (BR)CES C GE breakdown voltage V = 15 V, I = 35 A V 1.95 2.45 V GE C CE(sat) Collector-emitter saturation voltage (terminal) V = 15 V, I = 35 A, T = 150 C 2.3 V GE C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I V = 0 V, V = 1200 V Collector cut-off current 100 A CES GE CE Gate-emitter leakage I V = 0 V, V = 20 V 500 nA GES CE GE current C Input capacitance 2154 pF ies C Output capacitance 164 pF oes V = 25 V, f = 1 MHz, V = 0 V CE GE Reverse transfer C 86 pF res capacitance V = 960 V, I = 35 A, CC C Q Total gate charge 163 nC g V = 15 V GE t Turn-on delay time 127 ns d(on) V = 600 V, I = 35 A, CC C t Current rise time 18.5 ns r R = 10 , V = 15 V, G GE (1) di/dt = 1460 A/s E Turn-on switching energy 1.065 mJ on DS11632 - Rev 4 page 2/19