APTM120H140FT1G Microchip

APTM120H140FT1G V = 1200V DSS Full - Bridge R = 1.4 typ Tj = 25C DSon MOSFET Power Module I = 8A Tc = 25C D 3 4 Application Welding converters Q1 Switched Mode Power Supplies Q3 Uninterruptible Power Supplies Motor control 5 2 6 1 Features Q2 Q4 Power MOS 8 Fast FREDFETs - Low R DSon - Low input and Miller capacitance 79 - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated 810 - Very rugged Very low stray inductance NTC 11 12 - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 1200 V DSS T = 25C 8 c I Continuous Drain Current D A T = 80C 6 c I Pulsed Drain current 50 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 1.68 DSon P Maximum Power Dissipation T = 25C 208 W D c I Avalanche current (repetitive and non repetitive) 7 A AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTM120H140FT1G Rev 1 October, 2012 APTM120H140FT1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 250 V = 1200V j DS I Zero Gate Voltage Drain Current A DSS V = 0V GS T = 125C 1000 j R Drain Source on Resistance V = 10V, I = 7A 1.4 1.68 DS(on) GS D V Gate Threshold Voltage V = V , I = 1mA 3 4 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V 100 nA GSS GS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 3812 V = 0V iss GS V = 25V pF C Output Capacitance 350 DS oss f = 1MHz C Reverse Transfer Capacitance 44 rss Q Total gate Charge 145 g V = 10V GS Q Gate Source Charge V = 600V 24 nC gs Bus I = 7A D Q Gate Drain Charge 70 gd T Turn-on Delay Time Resistive switching 25C 26 d(on) V = 15V GS T Rise Time 15 r V = 800V ns Bus T Turn-off Delay Time 85 d(off) I = 7A D R = 4.7 T Fall Time G 24 f Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Continuous Source current Tc = 25C 8 S A (Body diode) Tc = 80C 6 V Diode Forward Voltage V = 0V, I = - 7A 1 V SD GS S dv/dt Peak Diode Recovery 25 V/ns T = 25C 250 j t Reverse Recovery Time ns rr I = - 7A S T = 125C 520 j V = 100V R T = 25C 1.12 di /dt = 100A/s j S Q Reverse Recovery Charge C rr T = 125C 3.03 j dv/dt numbers reflect the limitations of the circuit rather than the device itself. I - 7A di/dt 1000A/s V 800V T 125C S DD j 2 7 www.microsemi.com APTM120H140FT1G Rev 1 October, 2012