APTM50H15FT1G Microchip

APTM50H15FT1G V = 500V DSS Full - Bridge R = 130m typ Tj = 25C DSon MOSFET Power Module I = 25A Tc = 25C D 3 4 Application Welding converters Q1 Switched Mode Power Supplies Q3 Uninterruptible Power Supplies Motor control 5 2 6 1 Features Q2 Q4 Power MOS 8 FREDFETs - Low R DSon - Low input and Miller capacitance 79 - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated 810 - Very rugged Very low stray inductance NTC 11 12 - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 500 V DSS T = 25C 25 c I Continuous Drain Current D A T = 80C 19 c I Pulsed Drain current 135 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 156 DSon m P Maximum Power Dissipation T = 25C 208 W D c I Avalanche current (repetitive and non repetitive) 21 A AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 6 www.microsemi.com APTM50H15FT1G Rev 1 October 2012 APTM50H15FT1G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 250 V = 500V j DS I Zero Gate Voltage Drain Current A DSS V = 0V GS T = 125C 1000 j R Drain Source on Resistance V = 10V, I = 21A 130 156 m DS(on) GS D V Gate Threshold Voltage V = V , I = 1mA 3 4 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V 100 nA GSS GS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 5448 V = 0V iss GS V = 25V pF C Output Capacitance 735 DS oss f = 1MHz C Reverse Transfer Capacitance 72 rss Q Total gate Charge 170 g V = 10V GS Q Gate Source Charge V = 250V 38 nC gs Bus I = 21A D Q Gate Drain Charge 80 gd T Turn-on Delay Time Resistive switching 25C 29 d(on) V = 15V GS T Rise Time 35 r V = 333V ns Bus T Turn-off Delay Time 80 d(off) I = 21A D R = 4.7 T Fall Time G 26 f Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Continuous Source current Tc = 25C 25 S A (Body diode) Tc = 80C 19 V Diode Forward Voltage V = 0V, I = - 21A 1 V SD GS S dv/dt Peak Diode Recovery 30 V/ns T = 25C 215 j t Reverse Recovery Time ns rr I = - 21A S T = 125C 370 j V = 100V R T = 25C 0.90 di /dt = 100A/s j S Q Reverse Recovery Charge C rr T = 125C 2.6 j dv/dt numbers reflect the limitations of the circuit rather than the device itself. I - 21A di/dt 1000A/s V 333V T 125C S DD j 2 6 www.microsemi.com APTM50H15FT1G Rev 1 October 2012