APTM50HM75STG V = 500V Full bridge DSS R = 75m typ Tj = 25C DSon Series & parallel diodes I = 46A Tc = 25C D MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies CR1A CR3A Uninterruptible Power Supplies CR1B CR3B Q1 Q3 Features Power MOS 7 MOSFETs G1 G3 OUT1 OUT2 S3 - Low R S1 DSon - Low input and Miller capacitance CR2A CR4A - Low gate charge CR2B CR4B Q2 Q4 - Avalanche energy rated - Very rugged G4 G2 Kelvin source for easy drive S2 S4 Very low stray inductance NTC1 0/VBUS NTC2 - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 500 V DSS T = 25C 46 c I Continuous Drain Current D T = 80C 34 A c I Pulsed Drain current 184 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 90 m DSon P Maximum Power Dissipation T = 25C 357 W D c I Avalanche current (repetitive and non repetitive) 46 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 2500 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTM50HM75STG Rev 6 October, 2013 APTM50HM75STG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 500V T = 25C 100 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 400V T = 125C 500 GS DS j R Drain Source on Resistance V = 10V, I = 23A 75 90 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 3 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 5600 iss V = 0V GS C Output Capacitance V = 25V 1200 pF oss DS f = 1MHz C Reverse Transfer Capacitance 90 rss Q Total gate Charge 123 g V = 10V GS Q Gate Source Charge 33 gs V = 250V nC Bus I = 46A D Q Gate Drain Charge 65 gd T Turn-on Delay Time 18 d(on) Inductive switching 125C V = 15V GS T Rise Time 35 r V = 333V ns Bus T Turn-off Delay Time 87 d(off) I = 46A D T Fall Time R = 5 77 G f E Turn-on Switching Energy Inductive switching 25C 755 on V = 15V, V = 333V J GS Bus E Turn-off Switching Energy 726 off I = 46A, R = 5 D G Inductive switching 125C E Turn-on Switching Energy 1241 on V = 15V, V = 333V J GS Bus E Turn-off Switching Energy 846 off I = 46A, R = 5 D G R Junction to Case Thermal Resistance 0.35 C/W thJC Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM I Maximum Reverse Leakage Current V=600V 250 A RM R I DC Forward Current T = 70C 30 A F c I = 30A 1.6 1.8 F I = 60A 1.9 V Diode Forward Voltage V F F I = 30A T = 125C F j 1.4 T = 25C 85 j t Reverse Recovery Time ns rr I = 30A F T = 125C 160 j V = 400V R T = 25C 130 j di/dt = 200A/s Q Reverse Recovery Charge nC rr T = 125C 700 j R Junction to Case Thermal Resistance 1.2 C/W thJC 2 7 www.microsemi.com APTM50HM75STG Rev 6 October, 2013