APTM100UM65SAG
Single switch
V = 1000V
DSS
R = 65m typ @ Tj = 25C
Series & parallel diodes
DSon
I = 145A @ Tc = 25C
D
MOSFET Power Module
Application
SK CR1
D
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
S
Motor control
Features
Q1
MOSFETs
Power MOS 7
- Low R
DSon
G
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
All ratings @ T = 25C unless otherwise specified
j
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V Drain - Source Breakdown Voltage 1000 V
DSS
T = 25C 145
c
I Continuous Drain Current
D
T = 80C 110 A
c
I Pulsed Drain current 580
DM
V Gate - Source Voltage 30 V
GS
R Drain - Source ON Resistance 78
DSon m
P Maximum Power Dissipation T = 25C 3250 W
D c
I Avalanche current (repetitive and non repetitive) 30 A
AR
E Repetitive Avalanche Energy 50
AR
mJ
E Single Pulse Avalanche Energy 3200
AS
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
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APTM100UM65S-AG Rev 4 November, 2013 APTM100UM65SAG
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I Zero Gate Voltage Drain Current V = 0V,V = 1000V 400 A
DSS GS DS
R Drain Source on Resistance V = 10V, I = 72.5A
65 78 m
DS(on) GS D
V Gate Threshold Voltage V = V , I = 20mA 3 5 V
GS(th) GS DS D
I Gate Source Leakage Current V = 30 V, V = 0V 400 nA
GSS GS DS
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C Input Capacitance 28.5
iss V = 0V
GS
C Output Capacitance V = 25V 5.08 nF
oss DS
f = 1MHz
C Reverse Transfer Capacitance 0.9
rss
Q Total gate Charge 1068
g
V = 10V
GS
Q Gate Source Charge V = 500V 136 nC
gs
Bus
I = 145A
D
Q Gate Drain Charge 692
gd
T Turn-on Delay Time 18
d(on)
V = 15V
GS
T Rise Time 14
r
V = 500V
Bus
ns
I = 145A
T Turn-off Delay Time D 140
d(off)
R = 0.75
G
T Fall Time 55
f
Inductive switching @ 25C
E Turn-on Switching Energy 4.8
on
V = 15V, V = 670V mJ
GS Bus
E Turn-off Switching Energy 2.9
off
I = 145A, R = 0.75
D G
Inductive switching @ 125C
E Turn-on Switching Energy 8
on
V = 15V, V = 670V mJ
GS Bus
E Turn-off Switching Energy 3.9
off
I = 145A, R = 0.75
D G
R Junction to Case Thermal Resistance 0.038 C/W
thJC
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V Maximum Peak Repetitive Reverse Voltage 1000 V
RRM
I Maximum Reverse Leakage Current V=1000V 750 A
RM R
I DC Forward Current Tc = 80C 240 A
F
I = 240A 2 2.5
F
I = 480A 2.2
V Diode Forward Voltage F V
F
I = 240A T = 125C
1.7
F j
T = 25C 280
j
t Reverse Recovery Time ns
rr
I = 240A
F
T = 125C 350
j
V = 667V
R
T = 25C 3.04
j
di/dt = 800A/s
Q Reverse Recovery Charge C
rr
T = 125C 14.4
j
R Junction to Case Thermal Resistance 0.23 C/W
thJC
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APTM100UM65S-AG Rev 4 November, 2013