X-On Electronics has gained recognition as a prominent supplier of APTM100UM65SAG Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APTM100UM65SAG Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APTM100UM65SAG Microchip

APTM100UM65SAG electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.APTM100UM65SAG
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Power Module - Mosfet
Datasheet: APTM100UM65SAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 239.7713 ea
Line Total: USD 23977.13 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 100
Multiples : 1
100 : USD 239.7713
250 : USD 227.88
500 : USD 225.6012
1000 : USD 223.344
2000 : USD 221.1084
2500 : USD 218.8944
4000 : USD 216.7128
5000 : USD 214.542
10000 : USD 212.3928

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 379.4054

   
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We are delighted to provide the APTM100UM65SAG from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APTM100UM65SAG and other electronic components in the Discrete Semiconductor Modules category and beyond.

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APTM100UM65SAG Single switch V = 1000V DSS R = 65m typ @ Tj = 25C Series & parallel diodes DSon I = 145A @ Tc = 25C D MOSFET Power Module Application SK CR1 D Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies S Motor control Features Q1 MOSFETs Power MOS 7 - Low R DSon G - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant All ratings @ T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 1000 V DSS T = 25C 145 c I Continuous Drain Current D T = 80C 110 A c I Pulsed Drain current 580 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 78 DSon m P Maximum Power Dissipation T = 25C 3250 W D c I Avalanche current (repetitive and non repetitive) 30 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 3200 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTM100UM65S-AG Rev 4 November, 2013 APTM100UM65SAG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V,V = 1000V 400 A DSS GS DS R Drain Source on Resistance V = 10V, I = 72.5A 65 78 m DS(on) GS D V Gate Threshold Voltage V = V , I = 20mA 3 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V, V = 0V 400 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 28.5 iss V = 0V GS C Output Capacitance V = 25V 5.08 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.9 rss Q Total gate Charge 1068 g V = 10V GS Q Gate Source Charge V = 500V 136 nC gs Bus I = 145A D Q Gate Drain Charge 692 gd T Turn-on Delay Time 18 d(on) V = 15V GS T Rise Time 14 r V = 500V Bus ns I = 145A T Turn-off Delay Time D 140 d(off) R = 0.75 G T Fall Time 55 f Inductive switching @ 25C E Turn-on Switching Energy 4.8 on V = 15V, V = 670V mJ GS Bus E Turn-off Switching Energy 2.9 off I = 145A, R = 0.75 D G Inductive switching @ 125C E Turn-on Switching Energy 8 on V = 15V, V = 670V mJ GS Bus E Turn-off Switching Energy 3.9 off I = 145A, R = 0.75 D G R Junction to Case Thermal Resistance 0.038 C/W thJC Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1000 V RRM I Maximum Reverse Leakage Current V=1000V 750 A RM R I DC Forward Current Tc = 80C 240 A F I = 240A 2 2.5 F I = 480A 2.2 V Diode Forward Voltage F V F I = 240A T = 125C 1.7 F j T = 25C 280 j t Reverse Recovery Time ns rr I = 240A F T = 125C 350 j V = 667V R T = 25C 3.04 j di/dt = 800A/s Q Reverse Recovery Charge C rr T = 125C 14.4 j R Junction to Case Thermal Resistance 0.23 C/W thJC 2 7 www.microsemi.com APTM100UM65S-AG Rev 4 November, 2013

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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