X-On Electronics has gained recognition as a prominent supplier of MCD255-18io1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MCD255-18io1 Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MCD255-18io1 IXYS

MCD255-18io1 electronic component of IXYS
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Part No.MCD255-18io1
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 255 Amps 1800V
Datasheet: MCD255-18io1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 183.4269 ea
Line Total: USD 183.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 183.4269
6 : USD 172.7518

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 218.4375

   
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We are delighted to provide the MCD255-18io1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCD255-18io1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MCD255-18io1 V = 2x1800 V RRM Thyristor Diode Module I = 250 A TAV V = 1.08 V T Phase leg Part number MCD255-18io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y1 International standard package Motor control, softstarter Isolation Voltage: V~ 3600 Direct copper bonded Al2O3-ceramic Power converter Industry standard outline with copper base plate Heat and temperature control for RoHS compliant Planar passivated chip industrial furnaces and chemical Soldering pins for PCB mounting Keyed gate/cathode twin pins processes Base plate: Copper Lighting control internally DCB isolated Solid state switches Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f 2019 IXYS all rights reservedMCD255-18io1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1900 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1800 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 8 0 0 V T = 25C 1 mA R/D R/D VJ V = 1 8 0 0 V T = 1 4 0 C 40 mA R/D VJ forward voltage drop V I = 3 0 0 A T = 25C 1.14 V T T VJ I = 6 0 0 A 1.36 V T T = C 1.08 V I = 3 0 0 A 125 T VJ I = 6 0 0 A 1.33 V T average forward current T = 8 5 C T = 1 4 0 C 250 A I TAV C VJ RMS forward current I 180 sine 450 A T(RMS) V T = 1 4 0 C 0.80 V threshold voltage T0 VJ for power loss calculation only slope resistance r 0.68 m T 0.14 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.04 K/W thCH P total power dissipation T = 25C 820 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 9.20 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 9.94 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 7.82 VJ t = 8,3 ms (60 Hz), sine V = 0 V 8.45 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 423.2 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 410.6 kAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 305.8 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 296.7 kAs R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 438 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 120 W GM P C t = 500 s 60 W P 20 W P average gate power dissipation GAV critical rate of rise of current T = 140C f = 50 Hz repetitive, I = 860 A 100 (di/dt) A/s cr VJ T 1 t = 2 0 0 s di /dt = A/s P G I = 1A V = V non-repet., I = 250 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 2 V GT D VJ T = -40C 3 V VJ gate trigger current V = 6 V T = 25C 150 mA I VJ GT D T = -40C 220 mA VJ gate non-trigger voltage V V = V T = 140C 0.25 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 30 s T = 25C 200 mA I VJ L p I = 0.45A di /dt = 0.45 A/s G G holding current I V = 6 V R = T = 25C 150 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 1A di /dt = 1 A/s G G turn-off time V = 100 V I = 300A V = V T =125 C 200 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 50 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f 2019 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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