MCC 220
MCD 220
I = 2x400 A
Thyristor Modules
TRMS
I = 2x250 A
TAVM
Thyristor/Diode Modules
V = 800-1800 V
RRM
3
V V Type
RSM RRM
7
2
6
V V
5
DSM DRM
4
1
V V Version 1 Version 1
900 800 MCC 220-08io1 MCD 220-08io1
1300 1200 MCC 220-12io1 MCD 220-12io1
1500 1400 MCC 220-14io1 MCD 220-14io1
1700 1600 MCC 220-16io1 MCD 220-16io1
1900 1800 MCC 220-18io1 MCD 220-18io1
3671 542
Symbol Conditions Maximum Ratings
I , I T = T 400 A
TRMS FRMS VJ VJM
I , I T = 85C; 180 sine 250 A
MCC
TAVM FAVM C
I , I T = 45C t = 10 ms (50 Hz), sine 8500 A
TSM FSM VJ
V = 0 t = 8.3 ms (60 Hz), sine 9000 A
R
31542
T = T t = 10 ms (50 Hz), sine 7000 A
VJ VJM
V = 0 t = 8.3 ms (60 Hz), sine 7600 A
R
MCD
2 2
i dt T = 45C t = 10 ms (50 Hz), sine 360000 A s
VJ
2
V = 0 t = 8.3 ms (60 Hz), sine 336000 A s
R
2
T = T t = 10 ms (50 Hz), sine 245000 A s
VJ VJM
2
V = 0 t = 8.3 ms (60 Hz), sine 240000 A s
R
Features
(di/dt) T = T ; repetitive, I = 750 A 100 A/s
cr VJ VJM T
International standard package
f = 50 Hz; t = 200 s
P
Direct copper bonded Al O -ceramic
2 3
2
V = / V
D 3 DRM base plate
Planar passivated chips
I = 1 A non repetitive, I = 250 A 800 A/s
G T
Isolation voltage 3600 V~
di /dt = 1 A/s
G
UL registered, E 72873
2
(dv/dt) T = T;V = / V 1000 V/s
cr VJ VJM DR 3 DRM
Keyed gate/cathode twin pins
R = ; method 1 (linear voltage rise)
GK
Applications
P T = T;t = 30 s 120 W
GM VJ VJM P
I = I;t = 500 s 60 W
T TAVM P
Motor control
Power converter
P 20 W
GAV
Heat and temperature control for
V 10 V
RGM
industrial furnaces and chemical
T -40...+140 C processes
VJ
T 140 C Lighting control
VJM
T -40...+125 C
Contactless switches
stg
V 50/60 Hz, RMS; t = 1 min 3000 V~
ISOL
Advantages
I 1 mA; t = 1 s 3600 V~
ISOL
Space and weight savings
M Mounting torque (M5) 2.5-5/22-44 Nm/lb.in.
d
Simple mounting
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
Improved temperature and power cycling
Weight Typical including screws 320 g
Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
2004 IXYS All rights reserved
1 - 4
419MCC 220
MCD 220
Symbol Conditions Characteristic Values
I T = T ; V = V ; V = V 70 mA
RRM VJ VJM R RRM D DRM
I 40 mA
DRM
V , V I /I = 600 A; T = 25C 1.53 V
T F T F VJ
V For power-loss calculations only (T = 140C) 0.9 V
T0 VJ
r 1.0 m
T
V V = 6 V; T = 25C 2 V
GT D VJ
T = -40C 3 V
VJ
I V = 6 V; T = 25C 150 mA
GT D VJ
T = -40C 200 mA
VJ
2
V T = T;V = / V 0.25 V
GD VJ VJM D 3 DRM
I 10 mA
GD
I T = 25C; t = 30 s; V = 6 V 200 mA
L VJ P D
I = 0.45 A; di /dt = 0.45 A/s
G G
I T = 25C; V = 6 V; R = 150 mA
H VJ D GK
t T = 25C; V = V 2s
gd VJ D DRM
I = 1 A; di /dt = 1 A/s
G G
Fig. 1 Gate trigger characteristics
t T = T ; I = 300 A, t = 200 s; -di/dt = 10 A/s typ. 200 s
q VJ VJM T P
2
V = 100 V; dv/dt = 50 V/s; V = / V
R D 3 DRM
Q T = 125C; I , I = 400 A, -di/dt = 50 A/s 760 C
S VJ T F
I 275 A
RM
R per thyristor/diode; DC current 0.139 K/W
thJC
per module other values 0.0695 K/W
R per thyristor/diode; DC current see Fig. 8/9 0.179 K/W
thJK
per module 0.0895 K/W
d Creepage distance on surface 12.7 mm
S
d Strike distance through air 9.6 mm
A
2
a Maximum allowable acceleration 50 m/s
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
Threaded spacer for higher Anode/
MCC MCD
Cathode construction:
Type ZY 250, material brass
20 12
14
2004 IXYS All rights reserved
2 - 4
419