X-On Electronics has gained recognition as a prominent supplier of TT425N12KOF Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TT425N12KOF Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TT425N12KOF Infineon

TT425N12KOF electronic component of Infineon
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Part No.TT425N12KOF
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V 800A DUAL
Datasheet: TT425N12KOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the TT425N12KOF from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT425N12KOF and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Netz-Thyristor-Modul TT425N Phase Control Thyristor Module Key Parameters V / V 1200 V - 1800 V DRM RRM I 471 A (T =85 C) TAVM C I 14500 A TSM V 0,9 V T0 r 0,35 m T R 0,065 K/W thJC Base plate 60 mm Weight 1500 g For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT425N Phase Control Thyristor Module TT425N TD425N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1400 1800 V repetitive peak forward off-state and reverse voltages 1200 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1400 1800 V non-repetitive peak forward off-state voltage 1300 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1500 1900 V non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 800 A TRMSM maximum RMS on-state current Dauergrenzstrom I 471 A T = 85C TAVM C average on-state current 14500 Stostrom-Grenzwert Tvj = 25C, tP = 10ms ITSM A 12500 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 1051000 As vj P It-value T = T , t = 10ms 781000 As vj vj max P 120 Kritische Stromsteilheit DIN IEC 747-6 (diT/dt)cr A/s critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,5 V Durchlaspannung T = T , i = 1500A v vj vj max T T on-state voltage max. 0,9 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,35 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 1,5 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: HR date of publication: 2014-04-23 approved by: ML revision: 3.1 Seite/page Date of Publication 2014-04-23 Revision: 3.1 2/11

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
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Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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