Technische Information / Technical Information IGBT-Module BSM100GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rckw. Spitzensperrspannung V 1600 V RRM repetitive peak reverse voltage Durchlastrom Grenzeffektivwert I 80 A FRMSM RMS forward current per chip Dauergleichstrom T = 80C I 100 A C d DC forward current Stostrom Grenzwert t = 10 ms, T = 25C I 700 A P vj FSM t = 10 ms, T = 150C surge forward current 570 A P vj 2 2 t = 10 ms, T = 25C Grenzlastintegral I t 2450 A s P vj 2 2 t = 10 ms, T = 150C 1620 I t - value P vj A s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung V 600 V CES collector-emitter voltage I Kollektor-Dauergleichstrom Tc = 70 C 100 A C,nom. DC-collector current T = 25 C I 135 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 70 C I 200 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 420 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom Tc = 70 C I 100 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 200 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C 2.300 R p vj I t A s 2 I t - value Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung V 600 V CES collector-emitter voltage T = 80 C I 50 A Kollektor-Dauergleichstrom C C,nom. DC-collector current T = 25 C I 75 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I 100 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 250 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom Tc = 70 C I 30 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 60 A P FRM repetitive peak forw. current prepared by: Andreas Schulz date of publication:29.03.2001 approved by: Robert Severin revision: 5 1(11) DB-PIM-10.xlsTechnische Information / Technical Information IGBT-Module BSM100GP60 IGBT-Modules Modul Isolation/ Module Isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Diode Gleichrichter/ Diode Rectifier Durchlaspannung T = 150C, I = V 100 A - 1,16 - V vj F F forward voltage Schleusenspannung T = 150C V - - 0,8 V vj (TO) threshold voltage Ersatzwiderstand T = 150C r - - 4,8 m vj T slope resistance Sperrstrom T = 150C, V = I 1600 V - 4 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R - 4 - m C AA +CC lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ Transistor Inverter V = 15V, T = 25C, I = V Kollektor-Emitter Sttigungsspannung 100 A - 1,95 2,45 V GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 100 A - 2,2 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = V 1,5 mA 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 4,3 - nF ies input capacitance V = 25 V, V = 0 V CE GE V = 0V, T = 25C, V = 600 V I - 3,0 500 A Kollektor-Emitter Reststrom GE vj CE CES collector-emitter cut-off current V = 0V, T =125C, V = 600 V - 4,0 - mA GE vj CE Gate-Emitter Reststrom V = 0V, V =20V, T =25C I - - 300 nA CE GE vj GES gate-emitter leakage current I = I , V = Einschaltverzgerungszeit (ind. Last) 300 V C Nenn CC turn on delay time (inductive load) V = 15V, T = 25C, R = t 15 Ohm - 50 - ns GE vj G d,on V = 15V, T = 125C, R = 15 Ohm - 45 - ns GE vj G Anstiegszeit (induktive Last) I = I , V = 300 V C Nenn CC rise time (inductive load) V = 15V, T = 25C, R = 15 Ohm t - 65 - ns GE vj G r V = 15V, T = 125C, R = 15 Ohm - 65 - ns GE vj G I = I , V = Abschaltverzgerungszeit (ind. Last) C Nenn CC 300 V turn off delay time (inductive load) V = 15V, T = 25C, R = 15 Ohm t - 260 - ns GE vj G d,off V = 15V, T = 125C, R = 15 Ohm - 285 - ns GE vj G I = I , V = Fallzeit (induktive Last) 300 V C Nenn CC fall time (inductive load) V = 15V, T = 25C, R = t 15 Ohm - 35 - ns GE vj G f V = 15V, T = 125C, R = 15 Ohm - 45 - ns GE vj G Einschaltverlustenergie pro Puls I = I , V = 300 V C Nenn CC turn-on energy loss per pulse V = 15V, T = 125C, R = E 15 Ohm - 4,2 - mWs GE vj G on L = 50 nH S I = I , V = 300 V Abschaltverlustenergie pro Puls C Nenn CC turn-off energy loss per pulse V = 15V, T = 125C, R = 15 Ohm E - 3,2 - mWs GE vj G off L = 50 nH S t 10s, V 15V, R = Kurzschluverhalten 15 Ohm P GE G SC Data T 125C, V = 360 V I - 400 - A SC vj CC dI/dt = 4000 A/s 2(11) DB-PIM-10.xls