MWI50-12A7T IXYS

MWI 50-12 A7 MWI 50-12 A7T I = 85 A IGBT Modules C25 V = 1200 V CES Sixpack V = 2.2 V CE(sat) typ. Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: 1 5 9 T 2 6 10 NTC MWI 50-12 A7 without NTC 16 15 MWI 50-12 A7T with NTC 14 3 7 11 E72873 T 4 8 12 See outline drawing for pin arrangement 17 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses V T = 25C to 150C 1200 V CES VJ switching frequency up to 30 kHz square RBSOA, no latch up V 20 V GES high short circuit capability I T = 25C 85 A C25 C positive temperature coefficient for I T = 80C 60 A easy parallelling C80 C MOS input, voltage controlled RBSOA V = 15 V R = 22 T = 125C I = 100 A GE VJ CM G ultra fast free wheeling diodes Clamped inductive load L = 100 H V V CEK CES solderable pins for PCB mounting package with copper base plate t V = V V = 15 V R = 22 T = 125C 10 s GE VJ SC CE CES G (SCSOA) non-repetitive Advantages P T = 25C 350 W tot C space savings reduced protection circuits package designed for wave soldering Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ Typical Applications min. typ. max. AC motor control V I = 50 A V = 15 V T = 25C 2.2 2.7 V VJ CE(sat) C GE AC servo and robot drives T = 125C 2.5 V VJ power supplies V I = 2 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 4 mA VJ CES CE CES GE T = 125C 3 mA VJ I V = 0 V V = 20 V 200 nA GES CE GE t 100 ns d(on) t 70 ns r Inductive load, T = 125C VJ t 500 ns d(off) V = 600 V I = 50 A CE C t 70 ns f V = 15 V R = 22 GE G E 7.6 mJ on E 5.6 mJ off C V = 25 V V = 0 V f = 1 MHz 3300 pF ies CE GE Q V = 600V V = 15 V I = 50 A 230 nC Gon CE GE C R (per IGBT) 0.35 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 1 - 4MWI 50-12 A7 MWI 50-12 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 110 A F25 C I T = 80C 70 A F80 C Symbol Conditions Characteristic Values min. typ. max. IGBT (typ. at V = 15 V T = 125C) V I = 50 A V = 0 V T = 25C 2.2 2.6 V GE J VJ F F GE V = 1.5 V R = 20.7 m T = 125C 1.6 1.8 V 0 0 VJ Free Wheeling Diode (typ. at T = 125C) I I = 50 A di /dt = -400 A/s T = 125C 40 A VJ J RM F F V = 1.3 V R = 6 m t V = 600 V V = 0 V 200 ns 0 0 rr R GE R (per diode) 0.61 K/W Thermal Response thJC Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R T = 25C 4.75 5.0 5.25 k 25 B 3375 K 25/50 IGBT (typ.) C = 0.22 J/K R = 0.26 K/W th1 th1 C = 1.74 J/K R = 0.09 K/W th2 th2 Module Free Wheeling Diode (typ.) Symbol Conditions Maximum Ratings C = 0.151 J/K R = 0.482 K/W th1 th1 C = 1.003 J/K R = 0.124 K/W th2 th2 T -40...+150 C VJ T -40...+125 C stg Dimensions in mm (1 mm = 0.0394 ) V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL M Mounting torque (M5) 2.7 - 3.3 Nm d Symbol Conditions Characteristic Values min. typ. max. R 5m pin-chip d Creepage distance on surface 6 mm S d Strike distance in air 6 mm A R with heatsink compound 0.02 K/W thCH Weight 180 g Higher magnification on page B3 - 72 IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 2 - 4