MDV1595S Single N-Channel Trench MOSFET 30V
MDV1595S
Single N-channel Trench MOSFET 30V, 36.1A, 10.7m
General Description Features
The MDV1595S uses advanced MagnaChip s MOSFET V = 30V
DS
Technology, which provides high performance in on-state I = 36.1A @V = 10V
D GS
resistance, fast switching performance and excellent R
DS(ON)
< 10.7m @V = 10V
quality. MDV1595S is suitable for DC/DC converter and GS
< 13.0m @V = 4.5V
general purpose applications. GS
100% UIL Tested
100% Rg Tested
SBD Built In
D
D D D D D D D D
G
S S S G G S S S
PDFN33
S
o
Absolute Maximum Ratings (Ta = 25 C)
Characteristics Symbol Rating Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 12 V
GSS
o
T =25 C 36.1
C
o
T =100 C 22.8 A
C
(1)
Continuous Drain Current I
D
o (3)
T =25 C 13.4
A
o (3)
T =70 C 10.8
A
Pulsed Drain Current I 80 A
DM
o
T =25 C 24.5
C
o
T =100 C 9.8
C
Power Dissipation P W
D
o (3)
T =25 C 3.4
A
o (3)
T =70 C 2.2
A
(2)
Single Pulse Avalanche Energy E 48 mJ
AS
o
Junction and Storage Temperature Range T , T -55~150 C
J stg
Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient R 36
JA
o
C/W
Thermal Resistance, Junction-to-Case R 5.1
JC
1
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd. MDV1595S Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDV1595SURH -55~150 C PDFN33 Tape & Reel Halogen Free
o
Electrical Characteristics (T = 25 C)
J
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - -
DSS D GS
V
Gate Threshold Voltage V V = V , I = 250A 1.0 1.5 2.0
GS(th) DS GS D
V = 30V, V = 0V - - 0.5
DS GS
Drain Cut-Off Current I mA
DSS
o
T =125 C - - 100
J
Gate Leakage Current I V = 12V, V = 0V - - 100 nA
GSS GS DS
V = 10V, I = 13A - 8.2 10.7
GS D
o
Drain-Source ON Resistance R T =125 C - 14.9 13.5 m
DS(ON) J
V = 4.5V, I = 11A - 10.0 13.0
GS D
Forward Transconductance g V = 5V, I = 13A - 27.3 - S
fs DS D
Dynamic Characteristics
Total Gate Charge Q 15.6 22.3 29.0
g(10V)
Total Gate Charge Q 6.9 9.9 12.9
g(4.5V)
V = 15.0V, I = 13A,
DS D
nC
V = 10V
GS
Gate-Source Charge Q - 3.0 -
gs
Gate-Drain Charge Q - 2.7 -
gd
Input Capacitance C - 1426 1853
iss
V = 15.0V, V = 0V,
DS GS
Reverse Transfer Capacitance C - 75.4 98 pF
rss
f = 1.0MHz
Output Capacitance C - 198 257
oss
Turn-On Delay Time t - 7.8 -
d(on)
Rise Time t - 3.1 -
r
V = 10V, V = 15.0V,
GS DS
ns
I = 13A, R = 3.0
D G
Turn-Off Delay Time t - 33.5 -
d(off)
Fall Time t - 4.3 -
f
Gate Resistance R f=1 MHz 0.5 1.0 2.0
g
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.45 0.7 V
SD S GS
Body Diode Reverse Recovery Time t - 24.2 36.3 ns
rr
I = 13A, dl/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q - 16.4 24.6 nC
rr
Note :
1. Surface mounted FR4 board with 2oz. Copper. Continuous current at T =25 is silicon limited.
C
2. E is tested at starting Tj = 25 , L = 0.1mH, I = 16.8A, V = 27V, V = 10V.
AS AS DD GS
3. T < 10sec
2
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.