SQP100P06-9m3L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -60 DS Package with low thermal resistance R () at V = -10 V 0.0093 DS(on) GS d AEC-Q101 qualified R () at V = -4.5 V 0.0133 DS(on) GS 100 % R and UIS tested g I (A) -100 D Material categorization: Configuration Single for definitions of compliance please see www.vishay.com/doc 99912 TO-220AB S G SS D D G Top View P-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and Halogen-free SQP100P06-9m3L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V V Gate-Source Voltage 20 GS T = 25 C -100 C I Continuous Drain Current D T = 125 C -58 C a I A Continuous Source Current (Diode Conduction) -120 S b I -300 Pulsed Drain Current DM I Single Pulse Avalanche Current -70 AS L = 0.1 mH Single Pulse Avalanche Energy E 245 mJ AS T = 25 C 187 C b Maximum Power Dissipation P W D T = 125 C 62 C T , T Operating Junction and Storage Temperature Range -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient R 40 PCB Mount thJA C/W R Junction-to-Case (Drain) 0.8 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square Pcb (Fr-4 material). d. Parametric verification ongoing. S14-2075-Rev. A, 03-Nov-14 Document Number: 62971 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQP100P06-9m3L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN. MAX. UNIT TYP. Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -60 - - DS GS D V V V = V , I = -250 A Gate-Source Threshold Voltage -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V -- -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -60 V, T = 125 C -- -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C -- -250 GS DS J a I V = -10 V V -5 V On-State Drain Current -100 - - A D(on) GS DS V = -10 V I = -30 A - 0.0072 0.0093 GS D V = -10 V I = -30 A, T = 125 C - - 0.0151 GS D J a R Drain-Source On-State Resistance DS(on) V = -10 V I = -30 A, T = 175 C - - 0.0184 GS D J V = -4.5 V I = -20 A - 0.0102 0.0133 GS D b g V = -15 V, I = -30 A Forward Transconductance -82 - S fs DS D b Dynamic C Input Capacitance - 9605 12 010 iss C V = 0 V V = -25 V, f = 1 MHz Output Capacitance - 1030 1290 pF oss GS DS Reverse Transfer Capacitance C - 750 940 rss c Q - 198 300 Total Gate Charge g c Q V = -10 V V = -30 V, I = -100 A -30 - nC Gate-Source Charge gs GS DS D c Q -54 - Gate-Drain Charge gd Gate Resistance R f = 1 MHz 1 2.2 3.5 g c t -18 30 Turn-On Delay Time d(on) c t -12 20 Rise Time r V = -30 V, R = 0.3 DD L ns I -100 A, V = -10 V, R = 1 c D GEN g t -85 130 Turn-Off Delay Time d(off) c t -36 55 Fall Time f b Source-Drain Diode Ratings and Characteristics a I Pulsed Current -- -300 A SM V I = -80 A, V = 0 Forward Voltage --0.95 -1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2075-Rev. A, 03-Nov-14 Document Number: 62971 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000