X-On Electronics has gained recognition as a prominent supplier of SQM120N06-06_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM120N06-06_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM120N06-06_GE3 Vishay

SQM120N06-06_GE3 electronic component of Vishay
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Part No.SQM120N06-06_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQM120N06-06_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.4142 ea
Line Total: USD 3.41 
Availability - 688
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
688
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 3.4142
10 : USD 2.9461
30 : USD 2.6681
100 : USD 2.3865
500 : USD 2.2572
800 : USD 2.1982

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQM120N06-06_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM120N06-06_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS Package with low thermal resistance R () at V = 10 V 0.006 DS(on) GS d AEC-Q101 qualified I (A) 120 D Configuration Single 100 % R and UIS tested g Package TO-263 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-263 D G SS DD GG N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS a T = 25 C 120 C Continuous Drain Current I D T = 125 C 80 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 480 DM Single Pulse Avalanche Current I 65 AS L = 0.1 mH Single Pulse Avalanche Energy E 211 mJ AS T = 25 C 230 C b Maximum Power Dissipation P W D T = 125 C 76 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.65 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1876-Rev. C, 10-Aug-15 Document Number: 67065 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM120N06-06 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0045 0.0060 GS D a Drain-Source On-State Resistance R V = 10 V I = 30 A, T = 125 C - - 0.0104 DS(on) GS D J V = 10 V I = 30 A, T = 175 C - - 0.0129 GS D J b Forward Transconductance g V = 15 V, I = 30 A - 94 - S fs DS D b Dynamic Input Capacitance C - 5196 6495 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz708885 pF oss GS DS Reverse Transfer Capacitance C -336420 rss c Total Gate Charge Q -96.5 145 g Gate-Source Charge Q -2V = 10 V V = 30 V, I = 75 A4.6- nC gs GS DS D c Gate-Drain Charge Q -27.2- gd Gate Resistance R f = 1 MHz 0.3 1 1.7 g c Turn-On Delay Time t -16 24 d(on) c Rise Time t -14 21 r V = 30 V, R = 0.4 DD L ns c I 75 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g451 d(off) c Fall Time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 480 A SM Forward Voltage V I = 75 A, V = 0 - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1876-Rev. C, 10-Aug-15 Document Number: 67065 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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