X-On Electronics has gained recognition as a prominent supplier of SQM120P04-04L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM120P04-04L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM120P04-04L_GE3 Vishay

SQM120P04-04L_GE3 electronic component of Vishay
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Part No.SQM120P04-04L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Channel 40V AEC-Q101 Qualified
Datasheet: SQM120P04-04L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 2.1982 ea
Line Total: USD 1758.56 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
7
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 3.1829
10 : USD 3.1085
30 : USD 3.0588
100 : USD 3.0093

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQM120P04-04L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM120P04-04L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM120P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC V (V) - 40 DS 61249-2-21 Definition R ( ) at V = - 10 V 0.0040 DS(on) GS TrenchFET Power MOSFET R ( ) at V = - 4.5 V 0.0060 DS(on) GS Package with Low Thermal Resistance I (A) - 120 D d AEC-Q101 Qualified Configuration Single 100 % R and UIS Tested g S Compliant to RoHS Directive 2002/95/EC TO-263 G G D S Top View D P-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120P04-04L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 40 DS V Gate-Source Voltage V 20 GS T = 25 C - 120 C a Continuous Drain Current I D T = 125 C - 120 C a Continuous Source Current (Diode Conduction) I - 120 A S b Pulsed Drain Current I - 330 DM Single Pulse Avalanche Current I - 80 AS L = 0.1 mH Single Pulse Avalanche Energy E 320 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.40 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S20-0526-Rev. C, 06-Jul-2020 Document Number: 67047 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM120P04-04L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 40 V - - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 40 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 40 V, T = 175 C - - - 250 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 120 - - A D(on) GS DS V = - 10 V I = - 30 A - 0.0034 0.0040 GS D V = - 10 V I = - 30 A, T = 125 C - - 0.0059 GS D J a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 30 A, T = 175 C - - 0.0070 GS D J V = - 4.5 V I = - 20 A - 0.0050 0.0060 GS D b Forward Transconductance g V = - 15 V, I = - 30 A - 97 - S fs DS D b Dynamic Input Capacitance C - 11 183 13 980 iss Output Capacitance C -V = 0 V V = - 20 V, f = 1 MHz16142020 pF oss GS DS Reverse Transfer Capacitance C -12941620 rss c Total Gate Charge Q - 220 330 g c Gate-Source Charge Q -3V = - 10 V V = - 20 V, I = - 110 A4- nC gs GS DS D c Gate-Drain Charge Q -56- gd Gate Resistance R f = 1 MHz 1.2 2.5 3.7 g c Turn-On Delay Time t -17 26 d(on) c Rise Time t -15 23 r V = - 20 V, R = 0.18 DD L ns c I - 110 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -112168 d(off) c Fall Time t -4568 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 330 A SM Forward Voltage V I = - 100 A, V = 0 - - 0.95 - 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0526-Rev. C, 06-Jul-2020 Document Number: 67047 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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