X-On Electronics has gained recognition as a prominent supplier of SQM200N04-1m7L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM200N04-1m7L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM200N04-1m7L_GE3 Vishay

SQM200N04-1m7L_GE3 electronic component of Vishay
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Part No.SQM200N04-1m7L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 200A 375 AEC-Q101 Qualified
Datasheet: SQM200N04-1m7L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1855 ea
Line Total: USD 3.19 
Availability - 3360
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3360
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1855
10 : USD 2.6565
25 : USD 2.576
100 : USD 2.1045
250 : USD 2.0585
500 : USD 1.863
800 : USD 1.817
2400 : USD 1.771
4800 : USD 1.7365

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQM200N04-1m7L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM200N04-1m7L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM200N04-1m7L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 40 DS Package with low thermal resistance R () at V = 10 V 0.0017 DS(on) GS 100 % R and UIS tested g R () at V = 4.5 V 0.0020 DS(on) GS d I (A) 200 AEC-Q101 qualified D Configuration Single Material categorization: Package TO-263-7L for definitions of compliance please see www.vishay.com/doc 99912 TO-263 7-Lead D G SS DD N-Channel MOSFET S GG Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 200 C Continuous Drain Current I D T = 125 C 193 C a Continuous Source Current (Diode Conduction) I 200 A S b Pulsed Drain Current I 600 DM Single Pulse Avalanche Current I 95 AS L = 0.1 mH Single Pulse Avalanche Energy E 451 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. B, 10-Aug-15 Document Number: 67058 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM200N04-1m7L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 200 - - A D(on) GS DS V = 10 V I = 30 A - 0.0012 0.0017 GS D V = 10 V I = 30 A, T = 125 C - - 0.0028 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0034 GS D J V = 4.5 V I = 20 A - 0.0014 0.0020 GS D b Forward Transconductance g V = 15 V, I = 30 A - 181 - S fs DS D b Dynamic Input Capacitance C - 8934 11 168 iss Output Capacitance C -V = 0 V V = 20 V, f = 1 MHz15921990 pF oss GS DS Reverse Transfer Capacitance C -9281160 rss c Total Gate Charge Q - 194 291 g c Gate-Source Charge Q -2V = 10 V V = 20 V, I = 20 A5- nC gs GS DS D c Gate-Drain Charge Q -40- gd Gate Resistance R f = 1 MHz 0.25 0.8 1.8 g c Turn-On Delay Time t -22 33 d(on) c Rise Time t -17 26 r V = 20 V, R = 1 DD L ns c I 20 A, V = 10 V, R = 1 Turn-Off Delay Time t -7D GEN g0105 d(off) c Fall Time t -1624 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 600 A SM Forward Voltage V I = 60 A, V = 0 V - 0.8 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. B, 10-Aug-15 Document Number: 67058 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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