SQM40010EL www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 40 DS Package with low thermal resistance R ( ) at V = 10 V 0.0016 DS(on) GS 100 % R and UIS tested g R ( ) at V = 4.5 V 0.0019 DS(on) GS d AEC-Q101 qualified I (A) 120 D Material categorization: Configuration Single for definitions of compliance please see www.vishay.com/doc 99912 D TO-263 G SS S DD GG Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM40010EL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 120 C a Continuous Drain Current I D T = 125 C 120 C a Continuous Source Current (Diode Conduction) I 120 S A b Pulsed Drain Current I 300 DM Single Pulse Avalanche Current I 80 AS L = 0.1 mH Single Pulse Avalanche Energy E 320 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-2917-Rev. A, 14-Dec-15 Document Number: 69430 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM40010EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS A Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 2 mA GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.00121 0.00160 GS D V = 10 V I = 30 A, T = 125 C - - 0.00250 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.00280 GS D J V = 4.5 V I = 20 A - 0.00145 0.00190 GS D b Forward Transconductance g V = 15 V, I = 30 A - 174 - S fs DS D b Dynamic Input Capacitance C - 13 630 17 100 iss Output Capacitance C -V = 0 V V = 20 V, f = 1 MHz866010 900 pF oss GS DS Reverse Transfer Capacitance C -14601900 rss c Total Gate Charge Q - 150 230 g c Gate-Source Charge Q -3V = 10 V V = 20 V, I = 100 A0- nC gs GS DS D c Gate-Drain Charge Q -12- gd Gate Resistance R f = 1 MHz 0.8 1.62 2.5 g c Turn-On Delay Time t -14 25 d(on) c Rise Time t -20 30 r V = 20 V, R = 0.2 DD L ns I 100 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -6090 d(off) c Fall Time t -1425 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 300 A SM Forward Voltage V I = 70 A, V = 0 V - 0.85 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2917-Rev. A, 14-Dec-15 Document Number: 69430 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
