SQM40061EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-263 TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g AEC-Q101 qualified Material categorization: for definitions of compliance please see SS www.vishay.com/doc 99912 DD GG Top View S PRODUCT SUMMARY V (V) -40 G DS R ( ) at V = -10 V 0.0051 DS(on) GS R ( ) at V = -4.5 V 0.0071 DS(on) GS I (A) -100 D Configuration Single P-Channel MOSFET D Package TO-263 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -40 DS V Gate-source voltage V 20 GS a T = 25 C -100 C Continuous drain current I D T = 125 C -72 C a Continuous source current (diode conduction) I -100 A S b Pulsed drain current I -300 DM Single pulse avalanche current I -41 AS L = 0.1 mH Single pulse avalanche energy E 84 mJ AS T = 25 C 150 C b Maximum power dissipation P W D T = 125 C 50 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 1 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S17-1623-Rev. A, 23-Oct-17 Document Number: 75728 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM40061EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0, I = -250 A -40 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -1.5 - -2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -40 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -40 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -40 V, T = 175 C - - -250 GS DS J a On-state drain current I V = -10 V V -5 V -50 - - A D(on) GS DS V = -10 V I = -30 A - 0.0042 0.0051 GS D V = -10 V I = -30 A, T = 125 C - - 0.0079 GS D J a Drain-source on-state resistance R DS(on) V = -10 V I = -30 A, T = 175 C - - 0.0094 GS D J V = -4.5 V I = -25 A - 0.0059 0.0071 GS D a Forward transconductance g V = -15 V, I = -30 A - 103 - S fs DS D b Dynamic Input capacitance C - 11 063 14 500 iss Output capacitance C V = 0 V V = -25 V, f = 1 MHz - 847 1110 pF oss GS DS Reverse transfer capacitance C - 757 1000 rss c Total gate charge Q - 185 280 g c Gate-source charge Q V = -10 V V = -20 V, I = -50 A -25 - nC gs GS DS D c Gate-drain charge Q -30 - gd Gate resistance R f = 1 MHz 1.8 3.6 5.4 g c Turn-on delay time t -15 25 d(on) c Rise time t - 180 280 V = -20 V, R = 0.4 r DD L ns c I -50 A, V = -10 V, R = 1 Turn-off delay time t D GEN g - 145 220 d(off) c Fall time t - 160 250 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- -300 A SM Forward voltage V I = -30 A, V = 0 - -0.84 -1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1623-Rev. A, 23-Oct-17 Document Number: 75728 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000