X-On Electronics has gained recognition as a prominent supplier of RD3H045SPFRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3H045SPFRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3H045SPFRATL ROHM

Hot RD3H045SPFRATL electronic component of ROHM
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Part No.RD3H045SPFRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -45V Vdss -4.5A TO-252(DPAK); TO-252
Datasheet: RD3H045SPFRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4761 ea
Line Total: USD 0.48 
Availability - 2201
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2201
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4761
10 : USD 0.4666
30 : USD 0.459
100 : USD 0.4532

3325
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0614
10 : USD 0.974
100 : USD 0.7751
500 : USD 0.6578
1000 : USD 0.6176
2500 : USD 0.6026
5000 : USD 0.5934
25000 : USD 0.5923

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3H045SPFRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3H045SPFRATL and other electronic components in the MOSFETs category and beyond.

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RD3H045SPFRA Datasheet Pch -45V -4.5A Power MOSFET llOutline V -45V DSS DPAK R (Max.) 155m DS(on) TO-252 I 4.5A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 Taping code TL Marking RD3H045SP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS *1 I Continuous drain current 4.5 A D *2 I Pulsed drain current 9.0 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 15 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RD3H045SPFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 8.33 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4.5A - 110 155 GS D Static drain - source *4 R V = -4.5V, I = -4.5A - 160 225 m DS(on) GS D on - state resistance V = -4.0V, I = -4.5A - 185 260 GS D R Gate resistance f = 1MHz, open drain - 7.7 - G Forward Transfer *4 Y V = -10V, I = -4.5A 3.0 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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