X-On Electronics has gained recognition as a prominent supplier of RD3L050SNFRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3L050SNFRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3L050SNFRATL ROHM

RD3L050SNFRATL electronic component of ROHM
RD3L050SNFRATL ROHM
RD3L050SNFRATL MOSFETs
RD3L050SNFRATL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RD3L050SNFRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 60V 5A 15W Pd DPAK TO-252
Datasheet: RD3L050SNFRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6875 ea
Line Total: USD 1.69 
Availability - 2700
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2700
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.6875
10 : USD 1.152
100 : USD 0.8349
500 : USD 0.7678
1000 : USD 0.715
2500 : USD 0.6721
5000 : USD 0.6611
25000 : USD 0.66

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RD3L050SNFRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3L050SNFRATL and other electronic components in the MOSFETs category and beyond.

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RD3L050SNFRA Datasheet Nch 60V 5A Power MOSFET llOutline V 60V DSS DPAK R (Max.) 109m DS(on) TO-252 I 5.0A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 Taping code TL Marking RD3L050SN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 I Continuous drain current 5.0 A D *2 I Pulsed drain current 15 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 15 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180615 - Rev.001 RD3L050SNFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 8.33 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V , I = 1mA 1.0 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 5.0A - 78 109 GS D Static drain - source *4 R V = 4.5V, I = 5.0A - 94 131 m DS(on) GS D on - state resistance V = 4.0V, I = 5.0A - 100 140 GS D R Gate resistance f = 1MHz, open drain - 6.3 - G Forward Transfer *4 Y V = 10V, I = 5.0A 3.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/11 20180615 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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