A = G S D B = D S G IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET V = 500 V DSS Low Capacitance Z-MOS MOSFET Process TM I = 10 A D25 Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings T = 25C to 150C J V 500 V DSS T = 25C to 150C R = 1 M J GS 500 V V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 10 A D25 T = 25C, pulse width limited by T c JM I 60 A DM T = 25C c I 16 A AR T = 25C c TBD mJ E AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns (1) P 250 W DC T = 25C, Derate 6.0W/C above 25C c P 180 W DHS T = 25C c P 3 W DAMB 0.60 C/W R thJC R 0.85 C/W thJHS min. typ. max. V = 0 V, I = 4 ma GS D 500 V V DSS Features V = V , I = 250 V DS GS D 3.5 4.95 6.5 V GS(th) TM IXYS RF Low Capacitance Z-MOS V = 20 V , V = 0 GS DC DS I 100 nA GSS Process Very low insertion inductance (<2nH) V = 0.8V T = 25C DS DSS J I 50 A DSS V =0 T =125C GS J No beryllium oxide (BeO) or other 1 mA hazardous materials V = 20 V, I = 0.5I GS D D25 1.0 R DS(on) Advantages Pulse test, t 300S, duty cycle d 2% TM High Performance RF Z-MOS V = 50 V, I = 0.5I , pulse test DS D D25 g 3.8 S fs Common Source RF Package A = Gate Source Drain T -55 +175 C J B = Drain Source Gate T +175 C JM T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 4 g IXZH10N50LA/B RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. C 598 pF iss V = 0 V, V = 0.8 V , GS DS DSS(MAX) C 78 pF oss f = 1 MHz C 8 pF rss T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 3 ns on I = 0.5 I D DM R = 1 (External) 4 ns T G d(off) T 5 ns off VHF COMMUNICATIONS min. typ. max. Gps VDD= 50V, Pout=200W, f=175MHz 16 db 13 Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 50 60 % Load Mismatch VDD= 150V, Pout=300W, f=175MHz TBD 3T MRI min. typ. max. Gps(1) VDD=150V, P =475W, F=128MHz 12 13 db OUT Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 60 65 % Zin= 0.59-J0.90 Zout= 5.86+J9.34 (1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB.