X-On Electronics has gained recognition as a prominent supplier of RD3L150SNFRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3L150SNFRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3L150SNFRATL ROHM

RD3L150SNFRATL electronic component of ROHM
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Part No.RD3L150SNFRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 60V Vdss 15A ID TO-252(DPAK); TO-252
Datasheet: RD3L150SNFRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.65 ea
Line Total: USD 1.65 
Availability - 1736
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2162
10 : USD 1.184
30 : USD 1.1629
100 : USD 1.1419

1736
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.65
10 : USD 1.155
100 : USD 0.8602
500 : USD 0.7216
1000 : USD 0.6952
2500 : USD 0.6908
5000 : USD 0.6677
25000 : USD 0.66

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3L150SNFRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3L150SNFRATL and other electronic components in the MOSFETs category and beyond.

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RD3L150SNFRA Datasheet Nch 60V 15A Power MOSFET llOutline V 60V DSS DPAK R (Max.) 40m DS(on) TO-252 I 15A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Quantity (pcs) 2500 Taping code TL Marking RD3L150SN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 I Continuous drain current 15 A D *2 I Pulsed drain current 30 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RD3L150SNFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V , I = 1mA 1.0 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 28 40 GS D Static drain - source *4 R V = 4.5V, I = 15A - 33 47 m DS(on) GS D on - state resistance V = 4.0V, I = 15A - 36 51 GS D R Gate resistance f = 1MHz, open drain - 4.2 - G Forward Transfer *4 Y V = 10V, I = 15A 7 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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