X-On Electronics has gained recognition as a prominent supplier of EFC3J018NUZTDG mosfet across the USA, India, Europe, Australia, and various other global locations. EFC3J018NUZTDG mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

EFC3J018NUZTDG ON Semiconductor

EFC3J018NUZTDG electronic component of ON Semiconductor
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See Product Specifications
Part No.EFC3J018NUZTDG
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
Datasheet: EFC3J018NUZTDG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7984 ea
Line Total: USD 1.8

Availability - 0
MOQ: 1  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 12 Jun to Tue. 18 Jun

MOQ : 5000
Multiples : 5000
5000 : USD 0.6218
10000 : USD 0.6155
15000 : USD 0.6094
20000 : USD 0.6033
25000 : USD 0.5973
30000 : USD 0.5914
40000 : USD 0.5854
50000 : USD 0.5795
100000 : USD 0.5738

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the EFC3J018NUZTDG from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EFC3J018NUZTDG and other electronic components in the MOSFET category and beyond.

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. EFC3J018NUZ Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 20 V, 4.7 m , 23 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. V R (on) Max I SSS SS S Max Features 4.7 m 4.5 V 2.5 V drive 4.75 m 4.0 V 2 kV ESD HBM 20 V 23 A 4.9 m 3.8 V Common-Drain Type 5.4 m 3.1 V ESD Diode-Protected Gate 9.0 m 2.5 V Pb-Free, Halogen Free and RoHS compliance Applications ELECTRICAL CONNECTION N-Channel 1-2 Cells Lithium-ion Battery Charging and Discharging Switch SPECIFICATIONS 4, 6 ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Value Unit Rg Source to Source Voltage V 20 V SSS 5 Gate to Source Voltage V 12 V GSS Maximum Operating Gate to Source Voltage V 8 V GSS(OP) (Note 2) Rg Source Current (DC) I 23 A S 1:Source1 2 Source Current (Pulse) 2:Gate1 I 100 A SP 3:Source1 PW 100 s, duty cycle 1% 4:Source2 Total Dissipation (Note 3) P 2.5 T W 5:Gate2 Junction Temperature Tj 150 C 6:Source2 Rg=200 1, 3 Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not MARKING be assumed, damage may occur and reliability may be affected. Note 2 : Functional operation above the stresses listed in the recommended operating MT ranges is not implied. Extended exposure to stresses beyond the recommended operating ranges limits may affect device reliability LOT No. WLCSP6, 1.77x3.05 MT=DeviceCode THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient (Note 3) R 50 C/W ORDERING INFORMATION JA See detailed ordering and shipping 2 Note 3 : Surface mounted on ceramic substrate (5000 mm 0.8 mm). information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : March 2018 - Rev. 1 EFC3J018NUZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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