X-On Electronics has gained recognition as a prominent supplier of EFC4627R-TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. EFC4627R-TR MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

EFC4627R-TR ON Semiconductor

EFC4627R-TR electronic component of ON Semiconductor
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See Product Specifications
Part No.EFC4627R-TR
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH+NCH 2.5V DRIVE S
Datasheet: EFC4627R-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 15912
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15912
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.253
100 : USD 0.1386
1000 : USD 0.1111
2500 : USD 0.1089
8000 : USD 0.1001
24000 : USD 0.0957
96000 : USD 0.0946

   
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We are delighted to provide the EFC4627R-TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EFC4627R-TR and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA2288 EFC4627R N-Channel Power MOSFET EFC4627R Test circuits are example of measuring FET1 side Test Circuit 2 Test Circuit 1 I I GSS SSS S2 S2 G2 G2 A G1 V G1 SS A V S1 GS S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 3 Test Circuit 4 g V (th) FS GS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. V G1 V G1 SS SS V V GS GS S1 When FET1 is measured, S1 Gate and Source of FET2 are short-circuited. Test Circuit 6 Test Circuit 5 t (on), t ,t (off), t d r d f R (on) SS S2 S2 RL IS G2 G2 V V G1 G1 V SS V GS S1 When FET1 is measured, S1 PG Gate andSourceofFET2 are short-circuited. Test Circuit 8 Test Circuit 7 V F(S-S) Qg S2 S2 I A S G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V I =1mA G G1 G1 VGS=0V RL S1 When FET1 is S1 measured,+4.5V is added to V SS PG VGS of FET2. When FET2 is measured, the position of FET1 and FET2 is switched. No.A2288-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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