EFC6604R
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12V, 9.0m, 13A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
V R (on) Max I
SSS SS S Max
9.0m @ 4.5V
Features
9.7m @ 4.0V
2.5V drive
12V 13A
10.0m @ 3.8V
2kV ESD HBM
12.7m @ 3.1V
Common-Drain Type
17.7m @ 2.5V
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
ELECTRICAL CONNECTION
Applications
N-Channel
1-Cell Lithium-ion Battery Charging and Discharging Switch
4, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Rg
Parameter Symbol Value Unit
5
Source to Source Voltage V 12 V
SSS
Gate to Source Voltage V 12 V
GSS
Source Current (DC) I 13 A
S
Rg
1 : Source1
Source Current (Pulse)
2
I 60 A
2 : Gate1
SP
PW 10 s, duty cycle 1%
3 : Source1
Total Dissipation
4 : Source2
Surface mounted on ceramic substrate P
T 1.6 W
2 5 : Gate2
(5000mm 0.8mm)
Rg=200 1, 3 6 : Source2
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not be
MARKING
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
MD
Parameter Symbol Value Unit
LOT No.
Junction to Ambient
Surface mounted on ceramic substrate C/W
R 78.1
JA
2
(5000mm 0.8mm)
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2016
1 Publication Order Number :
March 2016 - Rev. 2
EFC6604R/D EFC6604R
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Ratings
Parameter Symbol Conditions Unit
min typ max
Source to Source Breakdown
V(BR) I =1mA, V =0V Test Circuit 1 12 V
SSS S GS
Voltage
Zero-Gate Voltage Source Current I V =10V, V =0V Test Circuit 1 1 A
SSS SS GS
Gate to Source Leakage Current I V =8V, V =0V Test Circuit 2 1.0 A
GSS GS SS
Gate Threshold Voltage V (th) V =6V, I =1mA Test Circuit 3 0.5 1.3 V
GS SS S
Forward Transconductance g V =6V, I =3A Test Circuit 4 13.7 S
FS SS S
R (on)1 I =3A, V =4.5V Test Circuit 5 6.0 7.5 9.0 m
SS S GS
R (on)2 I =3A, V =4.0V Test Circuit 5 6.4 8.1 9.7 m
SS S GS
Static Source to Source On-State
R (on)3 I =3A, V =3.8V Test Circuit 5 6.7 8.4 10.0 m
SS S GS
Resistance
R (on)4 I =3A, V =3.1V Test Circuit 5 7.8 9.8 12.7 m
SS S GS
R (on)5 I =3A, V =2.5V Test Circuit 5 10.0 12.6 17.7 m
SS S GS
Turn-ON Delay Time
t (on) 300 ns
d
Rise Time
t 1200 ns
r V =6V, V =4.5V, I=3A
SS GS S
Turn-OFF Delay Time Test Circuit 6
t (off) 5200 ns
d
Fall Time t 3900 ns
f
Total Gate Charge V =6V, V =4.5V, I =13A
SS GS S
Qg 29 nC
Test Circuit 7
Forward Source to Source Voltage
V I =3A, V =0V Test Circuit 8 0.75 1.2 V
F(S-S) S GS
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2