EFC6611R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2m, 27A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. V R (on) Max I SSS SS S Max 3.2m 4.5V Features 3.2m 4.0V 2.5V drive 12V 27A 3.2m 3.8V 2kV ESD HBM 4.4m 3.1V Common-Drain Type 6.3m 2.5V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION N-Channel Applications 1-Cell Lithium-ion Battery Charging and Discharging Switch 4, 6 Rg SPECIFICATIONS 5 ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Value Unit Source to Source Voltage V 12 V SSS Gate to Source Voltage V 8 V Rg GSS 1 : Source1 2 Source Current (DC) I 27 A 2 : Gate1 S 3 : Source1 Source Current (Pulse) A I 100 SP 4 : Source2 PW 100 s, duty cycle 1% 5 : Gate2 Total Dissipation Rg=200 1, 3 6 : Source2 Surface mounted on ceramic substrate P 2.5 W T 2 (5000mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. CSP6, 1.77x3.54 / THERMAL RESISTANCE RATINGS EFCP3517-6DGH-020 Parameter Symbol Value Unit Junction to Ambient Surface mounted on ceramic substrate R 50 C/W MARKING JA 2 (5000mm 0.8mm) ML LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : March 2016 - Rev. 2 EFC6611R/D EFC6611R ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Source to Source Breakdown Voltage V( ) I =1mA, V =0V Test Circuit 1 12 V BR SSS S GS Zero-Gate Voltage Source Current I V =10V, V =0V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V = 8V, V =0V Test Circuit 2 1 A GSS GS SS Gate Threshold Voltage V (th) V =6V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transconductance g V =6V, I =3A Test Circuit 4 19 S FS SS S R (on)1 I =5A, V =4.5V Test Circuit 5 1.8 2.3 3.2 m SS S GS R (on)2 I =5A, V =4.0V Test Circuit 5 1.9 2.4 3.2 m SS S GS Static Source to Source On-State R (on)3 I =5A, V =3.8V Test Circuit 5 2.0 2.6 3.2 SS S GS m Resistance R (on)4 I =5A, V =3.1V Test Circuit 5 2.1 3.3 4.4 SS S GS m R (on)5 I =5A, V =2.5V Test Circuit 5 SS S GS 2.7 4.0 6.3 m Turn-ON Delay Time t (on) 80 ns d t Rise Time 570 ns r V =6V, V =4.5V, I =3A Test Circuit 6 SS GS S Turn-OFF Delay Time t (off) 38,000 ns d t Fall Time f 17,700 ns Total Gate Charge Qg V =6V, V =4.5V, I =27A Test Circuit 7 100 nC SS GS S Forward Source to Source Voltage V I =3A, V =0V Test Circuit 8 0.75 1.2 V F(S-S) S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2