MTI85W100GC IXYS

MTI85W100GC V = 100 V DSS Three phase full Bridge I = 120 A with Trench MOSFETs D25 R = 3.2 m W in DCB-isolated high-current package DSon typ. Part number MTI85W100GC L+ G3 G5 Surface Mount Device G1 S3 S5 S1 L1 L2 L3 G4 G6 G2 S4 S6 S2 L Features / Advantages: Applications: Package: ISOPLUS-DIL MOSFETs in trench technology: AC drives High level of integration low R in automobiles RoHS compliant DSon optimized intrinsic reverse diode electric power steering High current capability Package: starter generator Aux. Terminals high level of integration in industrial vehicles for MOSFET control high current capability (300 A max.) propulsion drives Terminals for soldering or welding aux. terminals for MOSFET control fork lift drives connections terminals for soldering or welding in battery supplied equipment Space and weight savings connections isolated DCB ceramic base plate with optimized heat transfer Space and weight savings Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. 20170614g 2017 IXYS All rights reserved 1 - 7MTI85W100GC MOSFETs Ratings Symbol Definitions Conditions min. typ. max. Unit drain source breakdown voltage V T = 25C to 150C 100 V DSS VJ V gate source voltage 15 V GS V max. transient gate source voltage 20 V GSM I continuous drain current T = 25C 120 A D25 C I T = 90C 90 A D90 C forward current I T = 25C A F25 C I T = 90C A F90 C 1) static drain source on resistance R on-chip level at T = 25C 3.2 4 mW DS(on) VJ I = 80 A V = 10 V T = 125C 5.4 mW D GS VJ gate threshold voltage V I = 150 A V = V T = 25C 2.0 3.5 V GS(th) D DS GS VJ drain source leakage current I V = V V = 0 V T = 25C 1 A DSS DS DSS GS VJ T = 125C 10 100 A VJ I gate source leakage current V = 20 V V = 0 V 500 nA GSS GS DS R gate resistance on-chip level W G Q total gate charge 88 nC g gate source charge Q V = 10 V V = 50 V I = 80 A 30 nC gs GS DS D gate drain (Miller) charge Q 18 nC gd turn-on delay time t 90 ns d(on) current rise time t 55 ns r t turn-off delay time 480 ns d(off) inductive load T = 125C VJ t current fall time 40 ns f V = 10 V V = 50 V GS DS I = 80 A R = 39 W turn-on energy per pulse D G E 130 J on turn-off energy per pulse E 390 J off E turn-off reverse recovery losses 10 J rec(off) R thermal resistance junction to case 1.2 K/W thJC R thermal resistance junction to heatsink with heat transfer paste (IXYS test setup) 1.5 K/W thJH 1) V = I (R + 2 R ) DS D DS(on) Pin to Chip Source-Drain Diode V source drain voltage I = 80 A V = 0 V T = 25C 0.9 1.2 V SD F GS VJ Q reverse recovery charge 1.3 C RM V = 50 V I = 80 A R = 39 W T = 125C R F G VJ max. reverse recovery current I 44 A RM di/dt = 1500 A/s reverse recovery time t 45 ns rr IXYS reserves the right to change limits, test conditions and dimensions. 20170614g 2017 IXYS All rights reserved 2 - 7