Doc No. TT4-EA-10443
Revision. 2
Product Standards
MOS FET
MTM761100LBF
MTM761100LBF
Silicon P-channel MOSFET
Unit : mm
For Switching
2.0
0.2 0.13
6 5 4
Features
Low Drain-source On-state Resistance : RDS(on) typ. = 30 m (VGS = -4.0 V)
Low Drive Voltage : 1.8 V Drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
12 3
0.7
Marking Symbol :
9D
(0.65)(0.65)
1.3
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
1. Drain 4. Source
2. Drain 5. Drain
3. Gate 6. Drain
Absolute Maximum Ratings Ta = 25 C Panasonic WSMini6-F1-B
Parameter Symbol Rating Unit JEITA SC-113DA
Drain to Source Voltage VDS -12 V Code
Gate to Source Voltage VGS 8 V
Drain Current ID -4.0 A
*1
IDp -16 A Internal Connection
Drain Current (Pulsed)
*2
PD 700 mW
Total Power Dissipation
(D) (D) (S)
Channel Temperature Tch 150
6 5 4
Operating ambient temperature Topr -40 to +85 C
Storage Temperature Range Tstg -55 to +150
Note: *1
Pulse width 10 s, Duty cycle 1 %
*2 Measuring on ceramic board at 40 mm 38 mm 0.1 mm.
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
1 2 3
(D) (D) (G)
Pin Name
1. Drain 4. Source
2. Drain 5. Drain
3. Gate 6. Drain
Page 1 of 6
Established : 2008-01-31
Revised : 2013-10-15
1.7
2.1Doc No. TT4-EA-10443
Revision. 2
Product Standards
MOS FET
MTM761100LBF
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS V
ID = -1 mA, VGS = 0 V -12
Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 V -1.0 A
Gate-source Leakage Current IGSS VGS = 6.4 V, VDS = 0 V 10
A
Gate-source Threshold Voltage Vth V
ID = -1.0 mA, VDS = -6.0 V -0.3 -0.65 -1.0
RDS(ON)1
ID = -1 A, VGS = -4.0 V 30 42
*1
RDS(ON)2
ID = -0.5 A, VGS = -2.5 V 35 55 m
Drain-source On-state Resistance
RDS(ON)3
ID = -0.2 A, VGS = -1.8 V 45 75
*1
|Yfs| ID = -1 A, VDS = -10 V, f = 1 kHz 3.5 S
Forward transfer admittance
Input Capacitance Ciss
1200
VDS = -10 V, VGS = 0 V
Output Capacitance Coss 110 pF
f = 1 MHz
Reverse Transfer Capacitance Crss
110
VDD = -6 V, VGS = 0 to -4 V
*2
ton 30 ns
Turn-on Time
ID = -1 A
VDD = -6 V, VGS = -4 to 0 V
*2
toff 300 ns
Turn-off Time
ID = -1 A
Note
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test : Pulse width 300 s, Duty cycle 2 %
*2 Measurement circuit for Turn-on Time / Turn-off Time
Page 2of 6
Established : 2008-01-31
Revised : 2013-10-15