Doc No. TT4-EA-10433
Revision. 2
Product Standards
MOS FET
MTM761110LBF
MTM761110LBF
Silicon P-channel MOSFET
Unit : mm
For Switching
Features
y Low Drain-source On-state Resistance : RDS(on) typ. = 26 m (VGS = -4.5 V)
y Low Drive Voltage : 1.8 V Drive
y
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Marking Symbol :
GS
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Drain 4. Source
2. Drain 5. Drain
3. Gate 6. Drain
Absolute Maximum Ratings Ta = 25 C Panasonic WSMini6-F1-B
Parameter Symbol Rating Unit JEITA SC-113DA
Drain to Source Voltage VDS -12 V Code
Gate to Source Voltage VGS 8 V
Drain Current ID -4.0 A
Drain Current (Pulsed) IDp -20 A Internal Connection
*1
PD 700 mW
Total Power Dissipation
(D) (D) (S)
Channel Temperature Tch 150 C
6 5 4
Topr -40 to + 85
Operating ambient temperature C
Storage Temperature Range Tstg -55 to +150 C
Note
*1 Measuring on ceramic board at 40 mm 38 mm 0.2 mm.
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
1 2 3
(D) (D) (G)
Pin Name
1. Drain 4. Source
2. Drain 5. Drain
3. Gate 6. Drain
Page 1 of 6
Established : 2008-02-01
Revised : 2013-10-18
Doc No. TT4-EA-10433
Revision. 2
Product Standards
MOS FET
MTM761110LBF
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = -1 mA, VGS = 0 -12 V
Drain-source cutoff current IDSS VDS = -10 V, VGS = 0 -0.1 A
Gate-source cutoff current IGSS VGS = 8 V, VDS = 0 10 A
Gate threshold voltage Vth ID = -1.0 mA, VDS = -6.0 V -0.3 -0.65 -1.0 V
RDS(ON)1 ID = -1.0 A, VGS = -4.5 V 26 34
Drain-source ON resistance RDS(ON)2 ID = -0.5 A, VGS = -2.5 V 30 41
m
RDS(ON)3 ID = -0.5 A, VGS = -1.8 V 36 54
Forward transfer admittance |Yfs| 4.0 S
ID = -1.0 A, VDS = -10 V
Short-circuit input capacitance (Common source) Ciss 1400
Short-circuit output capacitance (Common source) Coss VDS = -10 V, VGS = 0, f = 1 MHz pF
135
Reverse transfer capacitance (Common source) Crss 150
*1
td(on)
Turn-on delay time VDD = -6 V, VGS = 0 to -4 V 9
ns
*1
tr ID = -1.0 A 11
Rise time
*1
Turn-off delay time td(off) VDD = -6 V, VGS = -4 to 0 V 270
ns
*1
tf ID = -1.0 A 160
Fall time
Note
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
Page 2of 6
Established : 2008-02-01
Revised : 2013-10-18